Li Jingqi, Wang Qingxiao, Yue Weisheng, Guo Zaibing, Li Liang, Zhao Chao, Wang Xianbin, Abutaha Anas I, Alshareef H N, Zhang Yafei, Zhang X X
ANIC Fab, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia.
Nanoscale. 2014 Aug 7;6(15):8956-61. doi: 10.1039/c4nr00978a.
Single-walled carbon nanotubes have been integrated into silicon for use in vertical carbon nanotube field-effect transistors (CNTFETs). A unique feature of these devices is that a silicon substrate and a metal contact are used as the source and drain for the vertical transistors, respectively. These CNTFETs show very different characteristics from those fabricated with two metal contacts. Surprisingly, the transfer characteristics of the vertical CNTFETs can be either ambipolar or unipolar (p-type or n-type) depending on the sign of the drain voltage. Furthermore, the p-type/n-type character of the devices is defined by the doping type of the silicon substrate used in the fabrication process. A semiclassical model is used to simulate the performance of these CNTFETs by taking the conductance change of the Si contact under the gate voltage into consideration. The calculation results are consistent with the experimental observations.
单壁碳纳米管已被集成到硅中，用于垂直碳纳米管场效应晶体管（CNTFET）。这些器件的一个独特之处在于，硅衬底和金属接触分别用作垂直晶体管的源极和漏极。这些碳纳米管场效应晶体管与用两个金属接触制造的晶体管表现出非常不同的特性。令人惊讶的是，垂直碳纳米管场效应晶体管的转移特性可以是双极性的，也可以是单极性的（p型或n型），这取决于漏极电压的符号。此外，器件的p型/n型特性由制造过程中使用的硅衬底的掺杂类型决定。通过考虑栅极电压下硅接触的电导变化，使用半经典模型来模拟这些碳纳米管场效应晶体管的性能。计算结果与实验观察结果一致。
