Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109, USA.
Phys Rev Lett. 2014 Jun 13;112(23):236802. doi: 10.1103/PhysRevLett.112.236802. Epub 2014 Jun 10.
Room temperature electrically pumped inversionless polariton lasing is observed from a bulk GaN-based microcavity diode. The low nonlinear threshold for polariton lasing occurs at 169 A/cm(2) in the light-current characteristics, accompanied by a collapse of the emission linewidth and small blueshift of the emission peak. Measurement of angle-resolved luminescence, polariton condensation and occupation in momentum space, and output spatial coherence and polarization have also been made. A second threshold, due to conventional photon lasing, is observed at an injection of 44 kA/cm(2).
室温下，我们在基于 GaN 的体微腔二极管中观察到了无反转的极化激元激射。在光电流特性中，极化激元激射的低非线性阈值出现在 169 A/cm(2)，同时伴随着发射线宽的崩塌和发射峰的小蓝移。角分辨发光、动量空间中的极化激元凝聚和占据以及输出空间相干性和偏振的测量也已完成。在注入电流为 44 kA/cm(2)时，观察到了由于传统光子激射引起的第二个阈值。
