Kim Youngsoo, Park Jaesung, Kang Junmo, Yoo Je Min, Choi Kyoungjun, Kim Eun Sun, Choi Jae-Boong, Hwang Chanyong, Novoselov K S, Hong Byung Hee
Department of Chemistry, Seoul National University, 1 Gwanak-ro, Seoul 151-742, Korea.
Nanoscale. 2014 Aug 21;6(16):9545-9. doi: 10.1039/c4nr00479e.
Doping is an efficient way to engineer the conductivity and the work function of graphene, which is, however, limited to wet-chemical doping or metal deposition particularly for n-doping, Here, we report a simple method of modulating the electrical conductivity of graphene by dual-side molecular n-doping with diethylenetriamine (DETA) on the top and amine-functionalized self-assembled monolayers (SAMs) at the bottom. The resulting charge carrier density of graphene is as high as -1.7 × 10(13) cm(-2), and the sheet resistance is as low as ∼86 ± 39 Ω sq(-1), which is believed to be the lowest sheet resistance of monolayer graphene reported so far. This facile dual-side n-doping strategy would be very useful to optimize the performance of various graphene-based electronic devices.
掺杂是调控石墨烯电导率和功函数的有效方法，然而，这仅限于湿化学掺杂或金属沉积，特别是对于n型掺杂而言。在此，我们报道了一种简单的方法，通过在顶部用二乙烯三胺（DETA）进行双侧分子n型掺杂以及在底部用胺功能化自组装单分子层（SAMs）来调节石墨烯的电导率。所得石墨烯的载流子密度高达 -1.7×10¹³ cm⁻²，薄层电阻低至约86±39 Ω sq⁻¹，这被认为是迄今为止报道的单层石墨烯的最低薄层电阻。这种简便的双侧n型掺杂策略对于优化各种基于石墨烯的电子器件的性能将非常有用。
