Pham Viet Phuong, Kim Kyong Nam, Jeon Min Hwan, Kim Ki Seok, Yeom Geun Young
SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do 440-746, Republic of Korea.
Nanoscale. 2014 Dec 21;6(24):15301-8. doi: 10.1039/c4nr04387a. Epub 2014 Nov 11.
We propose a novel doping method of graphene using the cyclic trap-doping method with low energy chlorine adsorption. Low energy chlorine adsorption for graphene chlorination avoided defect (D-band) formation during the doping by maintaining the π-bonding of the graphene, which affects conductivity. In addition, by trapping chlorine dopants between the graphene layers, the sheet resistance could be decreased by ∼ 88% under optimized conditions. Among the reported doping methods, including chemical, plasma, and photochemical methods, the proposed doping method is believed to be the most promising for producing graphene with extremely high transmittance, low sheet resistance, high thermal stability, and high flexibility for use in various flexible electronic devices. The results of Raman spectroscopy and sheet resistance showed that this method is also non-destructive and controllable. The sheet resistance of the doped tri-layer graphene was 70 Ω per sq. at transmittance of 94%, and which was maintained for more than 100 h in a vacuum at 230 °C. Moreover, the defect intensity of graphene was not increased during the cyclic trap-doping.
我们提出了一种利用低能氯吸附的循环陷阱掺杂法对石墨烯进行新型掺杂的方法。石墨烯氯化的低能氯吸附通过维持影响导电性的石墨烯π键，避免了掺杂过程中缺陷（D带）的形成。此外，通过将氯掺杂剂捕获在石墨烯层之间，在优化条件下，薄层电阻可降低约88%。在所报道的掺杂方法中，包括化学法、等离子体法和光化学法，所提出的掺杂方法被认为是最有前景的，可用于生产具有极高透光率、低薄层电阻、高热稳定性和高柔韧性的石墨烯，以用于各种柔性电子器件。拉曼光谱和薄层电阻的结果表明，该方法也是无损且可控的。掺杂的三层石墨烯在透光率为94%时的薄层电阻为每平方70Ω，并且在230℃的真空中保持100多个小时。此外，在循环陷阱掺杂过程中，石墨烯的缺陷强度没有增加。
