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基于人体头部电阻抗不对称性的单侧中风病灶快速成像方法的探索性研究

Exploratory study on the methodology of fast imaging of unilateral stroke lesions by electrical impedance asymmetry in human heads.

作者信息

Ma Jieshi, Xu Canhua, Dai Meng, You Fusheng, Shi Xuetao, Dong Xiuzhen, Fu Feng

机构信息

Department of Biomedical Engineering, Fourth Military Medical University, Xi'an 710032, China.

出版信息

ScientificWorldJournal. 2014;2014:534012. doi: 10.1155/2014/534012. Epub 2014 May 29.

DOI:10.1155/2014/534012
PMID:25006594
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4060593/
Abstract

Stroke has a high mortality and disability rate and should be rapidly diagnosed to improve prognosis. Diagnosing stroke is not a problem for hospitals with CT, MRI, and other imaging devices but is difficult for community hospitals without these devices. Based on the mechanism that the electrical impedance of the two hemispheres of a normal human head is basically symmetrical and a stroke can alter this symmetry, a fast electrical impedance imaging method called symmetrical electrical impedance tomography (SEIT) is proposed. In this technique, electrical impedance tomography (EIT) data measured from the undamaged craniocerebral hemisphere (CCH) is regarded as reference data for the remaining EIT data measured from the other CCH for difference imaging to identify the differences in resistivity distribution between the two CCHs. The results of SEIT imaging based on simulation data from the 2D human head finite element model and that from the physical phantom of human head verified this method in detection of unilateral stroke.

摘要

中风具有较高的死亡率和致残率，应迅速诊断以改善预后。对于拥有CT、MRI等成像设备的医院来说，诊断中风并非难事，但对于没有这些设备的社区医院而言则颇具困难。基于正常人头部两个半球的电阻抗基本对称且中风会改变这种对称性的机制，提出了一种名为对称电阻抗断层成像（SEIT）的快速电阻抗成像方法。在该技术中，从未受损的颅脑半球（CCH）测量得到的电阻抗断层成像（EIT）数据被视为从另一个CCH测量得到的其余EIT数据的参考数据，用于差异成像，以识别两个CCH之间电阻率分布的差异。基于二维人体头部有限元模型的模拟数据以及人体头部物理模型的SEIT成像结果，验证了该方法在检测单侧中风方面的有效性。

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