Dhindsa Navneet, Chia Andrew, Boulanger Jonathan, Khodadad Iman, LaPierre Ray, Saini Simarjeet S
Department of Electrical and Computer Engineering, University of Waterloo, 200 University Ave West, Waterloo, ON, N2L 3G1, Canada. Waterloo Institute of Nanotechnology, University of Waterloo, 200 University Ave West, Waterloo, ON, N2L 3G1, Canada.
Nanotechnology. 2014 Aug 1;25(30):305303. doi: 10.1088/0957-4484/25/30/305303. Epub 2014 Jul 10.
We report fabrication methods, including metal masks and dry etching, and demonstrate highly ordered vertical gallium arsenide nanowire arrays. The etching process created high aspect ratio, vertical nanowires with insignificant undercutting from the mask, allowing us to vary the diameter from 30 nm to 400 nm with a pitch from 250 nm to 1100 nm and length up to 2.2 μm. A diameter to pitch ratio of ∼68% was achieved. We also measured the reflectance from the nanowire arrays and show experimentally diameter-dependent strong absorption peaks resulting from resonant optical mode excitations within these nanowires. The reflectance curves match very well with simulations. The work done here paves the way towards achieving high efficiency solar cells and tunable photodetectors using III-V nanowires.
我们报告了包括金属掩膜和干法蚀刻在内的制备方法，并展示了高度有序的垂直砷化镓纳米线阵列。蚀刻工艺产生了高纵横比的垂直纳米线，且掩膜的侧向蚀刻不明显，这使我们能够将直径在30纳米至400纳米之间变化，间距在250纳米至1100纳米之间，长度可达2.2微米。实现了约68%的径间距比。我们还测量了纳米线阵列的反射率，并通过实验表明，这些纳米线内的共振光学模式激发会产生与直径相关的强吸收峰。反射率曲线与模拟结果非常吻合。此处所做的工作为使用III-V族纳米线实现高效太阳能电池和可调谐光电探测器铺平了道路。
