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一种采用CMOS/玻璃集成无源器件技术的低相位噪声Ka波段推挽式压控振荡器。

A low-phase-noise Ka-band push-push voltage-controlled oscillator using CMOS/glass-integrated passive device technologies.

作者信息

Wang Sen

出版信息

IEEE Trans Ultrason Ferroelectr Freq Control. 2014 Sep;61(9):1456-62. doi: 10.1109/TUFFC.2014.3059.

DOI:10.1109/TUFFC.2014.3059
PMID:25167145
Abstract

In this paper, a Ka-band CMOS push-push voltage- controlled oscillator (VCO) integrated into a glass-integrated passive device (GIPD) process is presented. The transformer, λ/4 transmission line, and inductors of the VCO are realized in the GIPD process, achieving superior performances, and therefore improve the phase noise of the VCO. Moreover, the transformer-based VCO is a differential Hartley topology to further reduce the phase noise and chip area. Operating at 1.8 V supply voltage, the VCO core consumes merely 3.8 mW of dc power. The measured phase noise is -109.18 dBc/Hz at 1 MHz offset from the 30.84 GHz oscillation frequency. The push-push VCO also demonstrates a 24.5 dB fundamental rejection, and exhibits an 8.4% tuning range. Compared with recently published CMOS-based VCOs, it is observed that the proposed VCO exhibits excellent performance under low power consumption.

摘要

本文介绍了一种集成到玻璃集成无源器件(GIPD)工艺中的Ka波段CMOS推挽式压控振荡器(VCO)。VCO的变压器、λ/4传输线和电感均采用GIPD工艺实现,性能优越,从而改善了VCO的相位噪声。此外,基于变压器的VCO采用差分哈特利拓扑结构,进一步降低了相位噪声和芯片面积。在1.8V电源电压下工作时,VCO内核仅消耗3.8mW的直流功率。在偏离30.84GHz振荡频率1MHz处测得的相位噪声为-109.18dBc/Hz。推挽式VCO还具有24.5dB的基波抑制能力,并展现出8.4%的调谐范围。与最近发表的基于CMOS的VCO相比,可以观察到所提出的VCO在低功耗下表现出优异的性能。

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