Suppr超能文献

一款全集成 W 波段推挽式 CMOS 压控振荡器,具有低相位噪声和宽调谐范围。

A fully integrated W-band push-push CMOS VCO with low phase noise and wide tuning range.

机构信息

Department of Electronic Engineering, National Taipei University of Technology, Taipei, Taiwan.

出版信息

IEEE Trans Ultrason Ferroelectr Freq Control. 2011 Jul;58(7):1307-19. doi: 10.1109/TUFFC.2011.1951.

Abstract

A circuit topology suitable for a low-phase-noise wide-tuning-range push-push voltage-controlled oscillator (VCO) is proposed in this paper. By applying varactors connected between drain and source terminations of the cross-coupled pair, the tuning range is effectively increased and the phase noise is improved. Moreover, a small capacitor is inserted between the VCO core and testing buffer to reduce loading effects on the VCO core. Furthermore, the enhanced second-harmonic output signal is extracted at middle of the varactors, leading to the elimination of RF choke at VCO's second-harmonic output port and a reduced chip size. Based on the proposed architecture, this VCO fabricated in 0.18-μm CMOS exhibits a measured 6.35% tuning range. Operating at a supply voltage of 1.2 V, the VCO core consumes 7.5-mW dc power, and the measured phase noise is -75 dBc/Hz and -91.5 dBc/Hz at 100-kHz and 1-MHz offsets from the 77.8-GHz carrier, respectively. Compared with previously published silicon-based VCOs over 70 GHz, this work can simultaneously achieve low phase noise, wide tuning range, and low dc power consumption, leading to a superior figure of merit (FOM), and better figure of merit considering the tuning range (FOM(T)). In addition, this fully integrated VCO also demonstrates the highest operation frequency among previously published 0.18-μm CMOS VCOs.

摘要

本文提出了一种适用于低相位噪声宽调谐范围推挽式压控振荡器(VCO)的电路拓扑结构。通过在交叉耦合对的漏极和源极之间连接变容二极管,可以有效地增加调谐范围并改善相位噪声。此外,在 VCO 核心和测试缓冲器之间插入一个小电容器,以减少对 VCO 核心的负载效应。此外,通过在变容二极管的中间提取增强的二次谐波输出信号,消除了 VCO 二次谐波输出端口的射频扼流圈,并减小了芯片尺寸。基于所提出的架构,该 VCO 采用 0.18μm CMOS 工艺制造,调谐范围为 6.35%。在 1.2V 的电源电压下工作时,VCO 核心消耗 7.5mW 的直流功率,在 77.8GHz 载波的 100kHz 和 1MHz 偏移处测量的相位噪声分别为-75dBc/Hz 和-91.5dBc/Hz。与之前发表的 70GHz 以上的硅基 VCO 相比,本工作可以同时实现低相位噪声、宽调谐范围和低直流功耗,具有较高的优值(FOM),并且在考虑调谐范围时具有更好的优值(FOM(T))。此外,这款完全集成的 VCO 还展示了之前发表的 0.18μm CMOS VCO 中最高的工作频率。

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验