Behera Prangyadarsini, Siddique Abrar, Delwar Tahesin Samira, Biswal Manas Ranjan, Choi Yeji, Ryu Jee-Youl
Department of Smart Robot Convergence and Application Engineering, Pukyong National University, Busan 48513, Korea.
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, ON N2L 3G1, Canada.
Sensors (Basel). 2022 Jun 22;22(13):4701. doi: 10.3390/s22134701.
The inductor was primarily developed on a low-voltage CMOS tunable active inductor (CTAI) for radar applications. Technically, the factors to be considered for VCO design are power consumption, low silicon area, high frequency with reasonable phase noise, an immense quality (Q) factor, and a large frequency tuning range (FTR). We used CMOS tunable active inductor (TAI) topology relying on cascode methodology for 24 GHz frequency operation. The newly configured TAI adopts the additive capacitor (Cad) with the cascode approach, and in the subthreshold region, one of the transistors functions as the TAI. The study, simulations, and measurements were performed using 65nm CMOS technology. The assembled circuit yields a spectrum from 21.79 to 29.92 GHz output frequency that enables sustainable platforms for K-band and Ka-band operations. The proposed design of TAI demonstrates a maximum Q-factor of 6825, and desirable phase noise variations of -112.43 and -133.27 dBc/Hz at 1 and 10 MHz offset frequencies for the VCO, respectively. Further, it includes enhanced power consumption that varies from 12.61 to 23.12 mW and a noise figure (NF) of 3.28 dB for a 24 GHz radar application under a low supply voltage of 0.9 V.
该电感主要是在用于雷达应用的低压CMOS可调有源电感（CTAI）上开发的。从技术上讲，VCO设计需要考虑的因素包括功耗、低硅面积、具有合理相位噪声的高频、巨大的品质因数（Q）以及较大的频率调谐范围（FTR）。我们采用基于共源共栅方法的CMOS可调有源电感（TAI）拓扑结构用于24GHz频率运行。新配置的TAI采用共源共栅方法的附加电容（Cad），并且在亚阈值区域，其中一个晶体管用作TAI。研究、仿真和测量均使用65nm CMOS技术进行。组装后的电路产生21.79至29.92GHz输出频率的频谱，可为K波段和Ka波段运行提供可持续平台。所提出的TAI设计展示了6825的最大品质因数，以及VCO在1MHz和10MHz偏移频率下分别为-112.43和-133.27dBc/Hz的理想相位噪声变化。此外，对于0.9V低电源电压下的24GHz雷达应用，它包括从12.61到23.12mW的增强功耗以及3.28dB的噪声系数（NF）。
