Deka Krisha M, Roy Soumik
Department of Electronics and Communication Engineering, Tezpur University, Napaam Post, Tezpur, Assam -784028.
Ann Neurosci. 2013 Oct;20(4):145-8. doi: 10.5214/ans.0972.7531.200405.
Enzyme modified field effect transistor (ENFET) may be used to represent the variable conductance of transmitter-gated ion channels in the postsynaptic region of the neuron.
The objective of this work is to develop a simple analog circuit model that can simulate the function of neurotransmitter glutamate gated ion channels of postsynaptic membrane at the synaptic cleft.
In this paper, Glutamate sensitive ENFET is incorporated into the Hodgkin-Huxley (H-H) circuit model of the postsynaptic membrane at the synaptic cleft.
Simulation of the circuit model yields an output representing the membrane potential of the synaptic region. Simulation is performed in MATLAB environment for excitatory action of synapses.
This model can be used in neuro-bioengineering programs for simulation of binding activity and electrical activity of the postsynaptic region.
酶修饰场效应晶体管（ENFET）可用于表示神经元突触后区域中递质门控离子通道的可变电导。
本研究的目的是开发一种简单的模拟电路模型，该模型能够模拟突触间隙处突触后膜神经递质谷氨酸门控离子通道的功能。
本文将谷氨酸敏感型ENFET纳入突触间隙处突触后膜的霍奇金-赫胥黎（H-H）电路模型。
对该电路模型进行模拟可产生代表突触区域膜电位的输出。在MATLAB环境中对突触的兴奋性作用进行了模拟。
该模型可用于神经生物工程项目，以模拟突触后区域的结合活性和电活动。
