Movvahedi M M, Tavakkoli-Golpayegani A, Mortazavi S A R, Haghani M, Razi Z, Shojaie-Fard M B, Zare M, Mina E, Mansourabadi L, Safari A, Shokrpour N, Mortazavi S M J
Department of Medical Physics, Shiraz University of Medical Sciences, Shiraz, Iran.
Standard Research Institute, Tehran, Iran.
J Pediatr Neurosci. 2014 May;9(2):121-4. doi: 10.4103/1817-1745.139300.
Now-a-days, children are exposed to mobile phone radiation at a very early age. We have previously shown that a large proportion of children in the city of Shiraz, Iran use mobile phones. Furthermore, we have indicated that the visual reaction time (VRT) of university students was significantly affected by a 10 min real/sham exposure to electromagnetic fields emitted by mobile phone. We found that these exposures decreased the reaction time which might lead to a better response to different hazards. We have also revealed that occupational exposures to radar radiations decreased the reaction time in radar workers. The purpose of this study was to investigate whether short-term exposure of elementary school students to radiofrequency (RF) radiation leads to changes in their reaction time and short-term memory.
A total of 60 elementary school children ages ranging from 8 to 10 years studying at a public elementary school in Shiraz, Iran were enrolled in this study. Standardized computer-based tests of VRT and short-term memory (modified for children) were administered. The students were asked to perform some preliminary tests for orientation with the VRT test. After orientation, to reduce the random variation of measurements, each test was repeated ten times in both real and sham exposure phases. The time interval between the two subsequent sham and real exposure phases was 30 min.
The mean ± standard deviation reaction times after a 10 min talk period and after a 10 min sham exposure (switched off mobile) period were 249.0 ± 82.3 ms and 252.9 ± 68.2 ms (P = 0.629), respectively. On the other hand, the mean short-term memory scores after the talk and sham exposure periods were 1062.60 ± 305.39, and 1003.84 ± 339.68 (P = 0.030), respectively.
To the best of our knowledge, this is the first study to show that short-term exposure of elementary school students to RF radiation leads to the better performance of their short-term memory.
如今，儿童在很小的时候就接触手机辐射。我们之前已经表明，伊朗设拉子市的很大一部分儿童使用手机。此外，我们指出，大学生的视觉反应时间（VRT）在接受10分钟手机发射的电磁场的真实/假暴露后受到显著影响。我们发现这些暴露缩短了反应时间，这可能导致对不同危险有更好的反应。我们还揭示，雷达工作者的职业性雷达辐射暴露缩短了反应时间。本研究的目的是调查小学生短期暴露于射频（RF）辐射是否会导致其反应时间和短期记忆发生变化。
本研究纳入了伊朗设拉子市一所公立小学的60名年龄在8至10岁的小学生。进行了基于计算机的标准化VRT测试和短期记忆测试（针对儿童进行了修改）。要求学生进行一些VRT测试的定向预测试。定向后，为减少测量的随机变化，在真实暴露阶段和假暴露阶段，每项测试均重复十次。两个连续的假暴露阶段和真实暴露阶段之间的时间间隔为30分钟。
10分钟通话期后的平均±标准差反应时间和10分钟假暴露（关闭手机）期后的反应时间分别为249.0±82.3毫秒和252.9±68.2毫秒（P = 0.629）。另一方面，通话期和假暴露期后的平均短期记忆分数分别为1062.60±305.39和1003.84±339.68（P = 0.030）。
据我们所知，这是第一项表明小学生短期暴露于射频辐射会使其短期记忆表现更好的研究。
