通过X射线光电子能谱测量的非极性A面GaN/AlN和AlN/GaN异质结构的带隙偏移。
Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy.
作者信息
Sang Ling, Zhu Qin Sheng, Yang Shao Yan, Liu Gui Peng, Li Hui Jie, Wei Hong Yuan, Jiao Chun Mei, Liu Shu Man, Wang Zhan Guo, Zhou Xiao Wei, Mao Wei, Hao Yue, Shen Bo
机构信息
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
Key Laboratory of Semiconductor Material Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
出版信息
Nanoscale Res Lett. 2014 Sep 4;9(1):470. doi: 10.1186/1556-276X-9-470. eCollection 2014.
The band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are measured by X-ray photoemission spectroscopy. A large forward-backward asymmetry is observed in the non-polar GaN/AlN and AlN/GaN heterojunctions. The valence-band offsets in the non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are determined to be 1.33 ± 0.16 and 0.73 ± 0.16 eV, respectively. The large valence-band offset difference of 0.6 eV between the non-polar GaN/AlN and AlN/GaN heterojunctions is considered to be due to piezoelectric strain effect in the non-polar heterojunction overlayers.
通过X射线光电子能谱测量了非极性A面GaN/AlN和AlN/GaN异质结的能带偏移。在非极性GaN/AlN和AlN/GaN异质结中观察到了较大的前后不对称性。确定非极性A面GaN/AlN和AlN/GaN异质结中的价带偏移分别为1.33±0.16和0.73±0.16电子伏特。非极性GaN/AlN和AlN/GaN异质结之间0.6电子伏特的较大价带偏移差异被认为是由于非极性异质结覆盖层中的压电应变效应。
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