DTU Nanotech, Technical University of Denmark , Ørsteds Plads 345E, Kongens Lyngby 2800, Denmark.
Nano Lett. 2014 Nov 12;14(11):6348-55. doi: 10.1021/nl5028167. Epub 2014 Oct 21.
The electrical performance of graphene synthesized by chemical vapor deposition and transferred to insulating surfaces may be compromised by extended defects, including for instance grain boundaries, cracks, wrinkles, and tears. In this study, we experimentally investigate and compare the nano- and microscale electrical continuity of single layer graphene grown on centimeter-sized single crystal copper with that of previously studied graphene films, grown on commercially available copper foil, after transfer to SiO2 surfaces. The electrical continuity of the graphene films is analyzed using two noninvasive conductance characterization methods: ultrabroadband terahertz time-domain spectroscopy and micro four-point probe, which probe the electrical properties of the graphene film on different length scales, 100 nm and 10 μm, respectively. Ultrabroadband terahertz time-domain spectroscopy allows for measurement of the complex conductance response in the frequency range 1-15 terahertz, covering the entire intraband conductance spectrum, and reveals that the conductance response for the graphene grown on single crystalline copper intimately follows the Drude model for a barrier-free conductor. In contrast, the graphene grown on commercial copper foil shows a distinctly non-Drude conductance spectrum that is better described by the Drude-Smith model, which incorporates the effect of preferential carrier backscattering associated with extended, electronic barriers with a typical separation on the order of 100 nm. Micro four-point probe resistance values measured on graphene grown on single crystalline copper in two different voltage-current configurations show close agreement with the expected distributions for a continuous 2D conductor, in contrast with previous observations on graphene grown on commercial copper foil. The terahertz and micro four-point probe conductance values of the graphene grown on single crystalline copper shows a close to unity correlation, in contrast with those of the graphene grown on commercial copper foil, which we explain by the absence of extended defects on the microscale in CVD graphene grown on single crystalline copper. The presented results demonstrate that the graphene grown on single crystal copper is electrically continuous on the nanoscopic, microscopic, as well as intermediate length scales.
通过化学气相沉积合成并转移到绝缘表面的石墨烯的电学性能可能会因扩展缺陷而受到影响,例如晶界、裂纹、皱纹和撕裂。在这项研究中,我们通过实验研究和比较了在厘米级单晶铜上生长的单层石墨烯与先前研究的在商用铜箔上生长的石墨烯薄膜在转移到 SiO2 表面后的纳米级和微级电连续性。使用两种非侵入式电导率表征方法来分析石墨烯薄膜的电连续性:超宽带太赫兹时域光谱和微四点探针,它们分别在 100nm 和 10μm 的不同长度尺度上探测石墨烯薄膜的电特性。超宽带太赫兹时域光谱法可以在 1-15 太赫兹的频率范围内测量复杂的电导率响应,覆盖整个内带电导率谱,并表明在单晶铜上生长的石墨烯紧密遵循无势垒导体的 Drude 模型。相比之下,在商用铜箔上生长的石墨烯表现出明显的非 Drude 电导率谱,该谱更符合包含与典型分离为 100nm 的扩展电子势垒相关的载流子背散射效应的 Drude-Smith 模型。在两种不同的电压-电流配置下,在单晶铜上生长的石墨烯的微四点探针电阻值与连续 2D 导体的预期分布非常吻合,这与以前在商用铜箔上生长的石墨烯的观察结果形成对比。在单晶铜上生长的石墨烯的太赫兹和微四点探针电导率值之间具有接近 1 的相关性,而在商用铜箔上生长的石墨烯则没有,我们将其解释为在单晶铜上生长的 CVD 石墨烯中不存在微观扩展缺陷。所提出的结果表明,在纳米级、微观级和中间长度尺度上,在单晶铜上生长的石墨烯在电学上是连续的。