Komlenok Maxim, Pivovarov Pavel, Popovich Alexey, Cheverikin Vladimir, Romshin Alexey, Rybin Maxim, Obraztsova Elena
Prokhorov General Physics Institute of the Russian Academy of Sciences, St. Vavilova 38, Moscow 119991, Russia.
Department of Physical Metallurgy of Non-Ferrous Metals, National University of Science and Technology "MISiS", Leninskiy Avenue 4, Moscow 119049, Russia.
Nanomaterials (Basel). 2023 May 22;13(10):1694. doi: 10.3390/nano13101694.
Chemical vapor deposition synthesis of graphene on polycrystalline copper substrates from methane is a promising technique for industrial production and application. However, the quality of grown graphene can be improved by using single-crystal copper (111). In this paper, we propose to synthesize graphene on epitaxial single-crystal Cu film deposited and recrystallized on a basal-plane sapphire substrate. The effect of film thickness, temperature, and time of annealing on the size of copper grains and their orientation is demonstrated. Under optimized conditions, the copper grains with the (111) orientation and a record size of several millimeters are obtained, and the single-crystal graphene is grown over their entire area. The high quality of synthesized graphene has been confirmed by Raman spectroscopy, scanning electron microscopy, and the sheet resistance measurements by the four point probe method.
通过甲烷在多晶铜衬底上进行化学气相沉积合成石墨烯是一种具有工业生产和应用前景的技术。然而，使用单晶铜（111）可以提高生长的石墨烯的质量。在本文中，我们提议在沉积并再结晶在基面蓝宝石衬底上的外延单晶铜膜上合成石墨烯。展示了膜厚度、温度和退火时间对铜晶粒尺寸及其取向的影响。在优化条件下，获得了具有（111）取向且尺寸达数毫米的创纪录大小的铜晶粒，并且在其整个区域上生长了单晶石墨烯。通过拉曼光谱、扫描电子显微镜以及四点探针法进行的薄层电阻测量证实了合成石墨烯的高质量。
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