Taliercio Thierry, Guilengui Vilianne Ntsame, Cerutti Laurent, Tournié Eric, Greffet Jean-Jacques
Opt Express. 2014 Oct 6;22(20):24294-303. doi: 10.1364/OE.22.024294.
We investigate highly-doped InAsSb layers lattice matched onto GaSb substrates by angular-dependent reflectance. A resonant dip is evidenced near the plasma frequency of thin layers. Based on Fresnel coefficient in the case of transverse electromagnetic wave, we interpret this resonance as due to the excitation of a leaky electromagnetic mode, the Brewster "mode", propagating in the metallic layer deposited on a dielectric material. Potential interest of this mode for in situ monitoring during device fabrication is also discussed.
我们通过角依赖反射率研究了与GaSb衬底晶格匹配的高掺杂InAsSb层。在薄层的等离子体频率附近出现了一个共振凹陷。基于横向电磁波情况下的菲涅耳系数，我们将这种共振解释为是由于一种泄漏电磁模式（即布儒斯特“模式”）在沉积在介电材料上的金属层中传播而激发的。还讨论了这种模式在器件制造过程中用于原位监测的潜在价值。
