Hu Wei, Chen Ruqi, Xie Wei, Zou Lilan, Qin Ni, Bao Dinghua
State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University , Guangzhou 510275, China.
ACS Appl Mater Interfaces. 2014 Nov 12;6(21):19318-26. doi: 10.1021/am5053784. Epub 2014 Oct 30.
We report that CoNi2S4 nanosheet arrays exhibit ultrahigh specific capacitance of 2906 F g(-1) and areal capacitance of 6.39 F cm(-2) at a current density of 5 mA cm(-2), as well as good rate capability and cycling stability, and superior electrochemical performances with an energy density of 33.9 Wh kg(-1) at a power density of 409 W kg(-1) have been achieved in an assembled aqueous asymmetric supercapacitor. The CoNi2S4 nanosheet arrays were in situ grown on nickel foams by a facile two-step hydrothermal method. The formation mechanism of the CoNi2S4 nanosheet arrays was based on an anion-exchange reaction involving the pseudo Kirkendall effect. The two aqueous asymmetric supercapacitors in series using the CoNi2S4 nanosheet arrays as the positive electrodes can power four 3-mm-diameter red-light-emitting diodes. The outstanding supercapacitive performance of CoNi2S4 nanosheet arrays can be attributed to ravine-like nanosheet architectures with good mechanical and electrical contact, low crystallinity and good wettability without an annealing process, rich redox reactions, as well as high conductivity and transport rate for both electrolyte ions and electrons. Our results demonstrate that CoNi2S4 nanosheet arrays are promising electrode materials for supercapacitor applications.
我们报道,CoNi2S4纳米片阵列在5 mA cm(-2)的电流密度下表现出2906 F g(-1)的超高比电容和6.39 F cm(-2)的面积电容,以及良好的倍率性能和循环稳定性,并且在组装的水系不对称超级电容器中实现了优异的电化学性能,在409 W kg(-1)的功率密度下能量密度达到33.9 Wh kg(-1)。CoNi2S4纳米片阵列通过简便的两步水热法原位生长在泡沫镍上。CoNi2S4纳米片阵列的形成机制基于涉及伪柯肯达尔效应的阴离子交换反应。使用CoNi2S4纳米片阵列作为正极的两个串联水系不对称超级电容器可为四个直径3毫米的红色发光二极管供电。CoNi2S4纳米片阵列出色的超级电容性能可归因于具有良好机械和电气接触的沟壑状纳米片结构、无需退火过程的低结晶度和良好润湿性、丰富的氧化还原反应,以及电解质离子和电子的高电导率和传输速率。我们的结果表明,CoNi2S4纳米片阵列是超级电容器应用中有前景的电极材料。