Zhao Xianyue, Menzel Stephan, Polian Ilia, Schmidt Heidemarie, Du Nan
Institute for Solid State Physics, Friedrich Schiller University Jena, Helmholtzweg 3, 07743 Jena, Germany.
Department of Quantum Detection, Leibniz Institute of Photonic Technology (IPHT), Albert-Einstein-Str. 9, 07745 Jena, Germany.
Nanomaterials (Basel). 2023 Apr 10;13(8):1325. doi: 10.3390/nano13081325.
This review provides a comprehensive examination of the state-of-the-art research on resistive switching (RS) in BiFeO (BFO)-based memristive devices. By exploring possible fabrication techniques for preparing the functional BFO layers in memristive devices, the constructed lattice systems and corresponding crystal types responsible for RS behaviors in BFO-based memristive devices are analyzed. The physical mechanisms underlying RS in BFO-based memristive devices, i.e., ferroelectricity and valence change memory, are thoroughly reviewed, and the impact of various effects such as the doping effect, especially in the BFO layer, is evaluated. Finally, this review provides the applications of BFO devices and discusses the valid criteria for evaluating the energy consumption in RS and potential optimization techniques for memristive devices.
本综述全面考察了基于铋铁氧体（BFO）的忆阻器件中电阻开关（RS）的前沿研究。通过探索制备忆阻器件中功能性BFO层的可能制造技术，分析了构成基于BFO的忆阻器件中RS行为的晶格系统和相应晶体类型。深入综述了基于BFO的忆阻器件中RS的物理机制，即铁电性和价态变化记忆，并评估了各种效应的影响，特别是掺杂效应（尤其是在BFO层中）。最后，本综述介绍了BFO器件的应用，并讨论了评估RS能耗的有效标准以及忆阻器件的潜在优化技术。
