Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China.
Small. 2015 Apr;11(13):1542-7. doi: 10.1002/smll.201402468. Epub 2014 Nov 3.
Ion beam sputtering deposition (IBSD) is used to synthesize high quality few-layer hexagonal boron nitride (h-BN) on copper foils. Compared to the conventional chemical vapor deposition, the IBSD technique avoids the use of unconventional precursors and is much easier to control, which should be very useful for the large-scale production of h-BN in the future.
离子束溅射沉积（IBSD）用于在铜箔上合成高质量的少层六方氮化硼（h-BN）。与传统的化学气相沉积相比，IBSD 技术避免了使用非常规前体，并且更容易控制，这对于未来 h-BN 的大规模生产应该非常有用。
