Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China.
Key Lab of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
Adv Mater. 2015 Dec 22;27(48):8109-15. doi: 10.1002/adma.201504042. Epub 2015 Nov 2.
Large-sized single-crystal h-BN domains with a lateral size up to 100 μm are synthesized on Ni foils by ion-beam sputtering deposition. The nucleation density of h-BN is dramatically decreased by reducing the concentrations of both active sites and species on the Ni surface through a brief in situ pretreatment of the substrate and optimization of the growth parameters, enabling the growth of large-sized domains.
采用离子束溅射沉积法在镍箔上合成了尺寸可达 100μm 的大尺寸单晶 h-BN 畴。通过对衬底进行短暂的原位预处理和优化生长参数，降低了镍表面活性位和物种的浓度，从而显著降低了 h-BN 的形核密度，有利于大尺寸畴的生长。
