Železný J, Gao H, Výborný K, Zemen J, Mašek J, Manchon Aurélien, Wunderlich J, Sinova Jairo, Jungwirth T
Institute of Physics ASCR, Cukrovarnická 10, 162 53 Praha 6, Czech Republic and Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, 121 16 Prague 2, Czech Republic.
Department of Physics, Texas A&M University, College Station, Texas 77843-4242, USA.
Phys Rev Lett. 2014 Oct 10;113(15):157201. doi: 10.1103/PhysRevLett.113.157201. Epub 2014 Oct 6.
We predict that a lateral electrical current in antiferromagnets can induce nonequilibrium Néel-order fields, i.e., fields whose sign alternates between the spin sublattices, which can trigger ultrafast spin-axis reorientation. Based on microscopic transport theory calculations we identify staggered current-induced fields analogous to the intraband and to the intrinsic interband spin-orbit fields previously reported in ferromagnets with a broken inversion-symmetry crystal. To illustrate their rich physics and utility, we consider bulk Mn(2)Au with the two spin sublattices forming inversion partners, and a 2D square-lattice antiferromagnet with broken structural inversion symmetry modeled by a Rashba spin-orbit coupling. We propose an antiferromagnetic memory device with electrical writing and reading.
我们预测，反铁磁体中的横向电流可以诱导非平衡奈尔序场，即其符号在自旋子晶格之间交替的场，这可以触发超快的自旋轴重新定向。基于微观输运理论计算，我们确定了交错电流诱导场，类似于先前在具有破缺反演对称性晶体的铁磁体中报道的带内和本征带间自旋轨道场。为了说明它们丰富的物理性质和实用性，我们考虑了具有两个形成反演伙伴的自旋子晶格的体相Mn₂Au，以及由Rashba自旋轨道耦合建模的具有破缺结构反演对称性的二维正方晶格反铁磁体。我们提出了一种具有电写入和读取功能的反铁磁存储器件。
