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二维胶片的转换：从瑕疵到完美。

Transfer of 2D Films: From Imperfection to Perfection.

作者信息

Pham Phuong V, Mai The-Hung, Dash Saroj P, Biju Vasudevanpillai, Chueh Yu-Lun, Jariwala Deep, Tung Vincent

机构信息

Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan.

Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg 41296, Sweden.

出版信息

ACS Nano. 2024 Jun 11;18(23):14841-14876. doi: 10.1021/acsnano.4c00590. Epub 2024 May 29.

DOI:10.1021/acsnano.4c00590
PMID:38810109
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11171780/
Abstract

Atomically thin 2D films and their van der Waals heterostructures have demonstrated immense potential for breakthroughs and innovations in science and technology. Integrating 2D films into electronics and optoelectronics devices and their applications in electronics and optoelectronics can lead to improve device efficiencies and tunability. Consequently, there has been steady progress in large-area 2D films for both front- and back-end technologies, with a keen interest in optimizing different growth and synthetic techniques. Parallelly, a significant amount of attention has been directed toward efficient transfer techniques of 2D films on different substrates. Current methods for synthesizing 2D films often involve high-temperature synthesis, precursors, and growth stimulants with highly chemical reactivity. This limitation hinders the widespread applications of 2D films. As a result, reports concerning transfer strategies of 2D films from bare substrates to target substrates have proliferated, showcasing varying degrees of cleanliness, surface damage, and material uniformity. This review aims to evaluate, discuss, and provide an overview of the most advanced transfer methods to date, encompassing wet, dry, and quasi-dry transfer methods. The processes, mechanisms, and pros and cons of each transfer method are critically summarized. Furthermore, we discuss the feasibility of these 2D film transfer methods, concerning their applications in devices and various technology platforms.

摘要

原子级薄的二维薄膜及其范德华异质结构已在科学技术的突破与创新方面展现出巨大潜力。将二维薄膜集成到电子和光电器件中，以及它们在电子和光电器件中的应用，能够提高器件效率和可调性。因此，用于前端和后端技术的大面积二维薄膜取得了稳步进展，人们对优化不同的生长和合成技术有着浓厚兴趣。与此同时，大量关注已投向二维薄膜在不同衬底上的高效转移技术。当前合成二维薄膜的方法通常涉及高温合成、前驱体以及具有高化学反应活性的生长促进剂。这一限制阻碍了二维薄膜的广泛应用。结果，关于二维薄膜从裸衬底转移到目标衬底的转移策略的报道激增，展示出不同程度的清洁度、表面损伤和材料均匀性。本综述旨在评估、讨论并概述迄今为止最先进的转移方法，包括湿法、干法和准干法转移方法。对每种转移方法的过程、机理以及优缺点进行了批判性总结。此外，我们讨论了这些二维薄膜转移方法在器件和各种技术平台中的应用可行性。

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