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通过真空退火富含胺的大分子对石墨烯进行高效 D 型掺杂

Highly Efficient -Type Doping of Graphene by Vacuum Annealed Amine-Rich Macromolecules.

作者信息

Seo Young-Min, Jang Wonseok, Gu Taejun, Whang Dongmok

机构信息

School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Korea.

SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea.

出版信息

Materials (Basel). 2020 May 8;13(9):2166. doi: 10.3390/ma13092166.

Abstract

Flexible transparent conducting electrodes (FTCE) are an essential component of next-generation flexible optoelectronic devices. Graphene is expected to be a promising material for the FTCE, because of its high transparency, large charge carrier mobilities, and outstanding chemical and mechanical stability. However, the electrical conductivity of graphene is still not good enough to be used as the electrode of an FTCE, which hinders its practical application. In this study, graphene was heavily -type doped while maintaining high transmittance by adsorbing amine-rich macromolecules to graphene. The -type charge-transfer doping of graphene was maximized by increasing the density of free amine in the macromolecule through a vacuum annealing process. The graphene adsorbed with the -type dopants was stacked twice, resulting in a graphene FTCE with a sheet resistance of 38 ohm/sq and optical transmittance of 94.1%. The figure of merit (FoM) of the graphene electrode is as high as 158, which is significantly higher than the minimum standard for commercially available transparent electrodes (FoM = 35) as well as graphene electrodes doped with previously reported chemical doping methods. Furthermore, the -doped graphene electrodes not only show outstanding flexibility but also maintain the doping effect even in high temperature (500 K) and high vacuum (~10 torr) conditions. These results show that the graphene doping proposed in this study is a promising approach for graphene-based next-generation FTCEs.

摘要

柔性透明导电电极(FTCE)是下一代柔性光电器件的重要组成部分。石墨烯因其高透明度、大电荷载流子迁移率以及出色的化学和机械稳定性,有望成为用于FTCE的一种有前景的材料。然而,石墨烯的电导率仍不足以用作FTCE的电极,这阻碍了其实际应用。在本研究中,通过将富含胺的大分子吸附到石墨烯上,在保持高透射率的同时对石墨烯进行了重掺杂。通过真空退火过程增加大分子中游离胺的密度,使石墨烯的n型电荷转移掺杂最大化。吸附有n型掺杂剂的石墨烯堆叠了两层,得到了一种方阻为38Ω/sq、光学透射率为94.1%的石墨烯FTCE。该石墨烯电极的品质因数(FoM)高达158,显著高于市售透明电极的最低标准(FoM = 35)以及采用先前报道的化学掺杂方法掺杂的石墨烯电极。此外,n掺杂的石墨烯电极不仅表现出出色的柔韧性,而且即使在高温(500 K)和高真空(~10托)条件下也能保持掺杂效果。这些结果表明,本研究中提出的石墨烯掺杂是一种用于基于石墨烯的下一代FTCE的有前景的方法。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7df2/7254272/340711056d79/materials-13-02166-g001.jpg

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