Arnoldi L, Silaeva E P, Vurpillot F, Deconihout B, Cadel E, Blum I, Vella A
GPM UMR 6634, Université de Rouen, Avenue de l'Université, 76801, BP12, 76801 Saint Etienne du Rouvray, France.
GPM UMR 6634, Université de Rouen, Avenue de l'Université, 76801, BP12, 76801 Saint Etienne du Rouvray, France.
Ultramicroscopy. 2015 Dec;159 Pt 2:139-46. doi: 10.1016/j.ultramic.2014.11.018. Epub 2014 Nov 28.
In order to improve the accuracy of laser atom probe analyses, it is important to understand all the physical processes induced by the combination of the high electrical field and the femtosecond laser beam during field evaporation. New information can be accessed from the energy of evaporated surface atoms or field-ionised atoms of an imaging gas. In order to study the ions energy, we combine La-APT and FIM analyses in a new experimental setup equipped with electrostatic lenses. We report measurements for semiconductors and oxides and we study the influence of the illumination conditions (laser power and wavelength), the evaporation rate, the sample geometry and the tip preparation processes. The results are discussed taking into account the resistive properties of non-metallic samples and the photo-stimulated conductivity. This work clarifies the role of the laser and DC field in the energy deficit of field evaporated ions.
为了提高激光原子探针分析的准确性，了解在场蒸发过程中高电场与飞秒激光束结合所引发的所有物理过程非常重要。从成像气体中蒸发表面原子或场电离原子的能量可以获取新信息。为了研究离子能量，我们在配备静电透镜的新实验装置中结合了激光原子探针（La-APT）和场离子显微镜（FIM）分析。我们报告了对半导体和氧化物的测量结果，并研究了光照条件（激光功率和波长）、蒸发速率、样品几何形状以及尖端制备过程的影响。在考虑非金属样品的电阻特性和光激发导电性的情况下对结果进行了讨论。这项工作阐明了激光和直流电场在场蒸发离子能量亏缺中的作用。
