通过电压诱导应变对Pt/Co/Pt中垂直磁各向异性和畴壁速度的改性。
Modification of perpendicular magnetic anisotropy and domain wall velocity in Pt/Co/Pt by voltage-induced strain.
作者信息
Shepley P M, Rushforth A W, Wang M, Burnell G, Moore T A
机构信息
School of Physics and Astronomy, University of Leeds, Leeds, LS2 9JT, United Kingdom.
School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, United Kingdom.
出版信息
Sci Rep. 2015 Jan 21;5:7921. doi: 10.1038/srep07921.
The perpendicular magnetic anisotropy K(eff), magnetization reversal, and field-driven domain wall velocity in the creep regime are modified in Pt/Co(0.85-1.0 nm)/Pt thin films by strain applied via piezoelectric transducers. K(eff), measured by the extraordinary Hall effect, is reduced by 10 kJ/m(3) by tensile strain out-of-plane ε(z) = 9 × 10(-4), independently of the film thickness, indicating a dominant volume contribution to the magnetostriction. The same strain reduces the coercive field by 2-4 Oe, and increases the domain wall velocity measured by wide-field Kerr microscopy by 30-100%, with larger changes observed for thicker Co layers. We consider how strain-induced changes in the perpendicular magnetic anisotropy can modify the coercive field and domain wall velocity.
通过压电换能器施加的应变，可改变Pt/Co(0.85 - 1.0 nm)/Pt薄膜在蠕变状态下的垂直磁各向异性K(eff)、磁化反转及场驱动畴壁速度。通过反常霍尔效应测量的K(eff)，在面外拉伸应变ε(z) = 9 × 10(-4)时降低了10 kJ/m(3)，且与薄膜厚度无关，这表明磁致伸缩主要来自体积贡献。相同应变使矫顽场降低2 - 4 Oe，并使宽场克尔显微镜测量的畴壁速度增加30 - 100%，对于较厚的Co层，变化更为明显。我们探讨了垂直磁各向异性的应变诱导变化如何改变矫顽场和畴壁速度。
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