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双层碲化钼中通过自旋-谷层耦合实现的塞曼分裂

Zeeman splitting via spin-valley-layer coupling in bilayer MoTe.

作者信息

Jiang Chongyun, Liu Fucai, Cuadra Jorge, Huang Zumeng, Li Ke, Rasmita Abdullah, Srivastava Ajit, Liu Zheng, Gao Wei-Bo

机构信息

Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.

Center for Programmable Materials, School of Materials Science & Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.

出版信息

Nat Commun. 2017 Oct 6;8(1):802. doi: 10.1038/s41467-017-00927-4.

DOI:10.1038/s41467-017-00927-4
PMID:28986559
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5630581/
Abstract

Atomically thin monolayer transition metal dichalcogenides possess coupling of spin and valley degrees of freedom. The chirality is locked to identical valleys as a consequence of spin-orbit coupling and inversion symmetry breaking, leading to a valley analog of the Zeeman effect in presence of an out-of-plane magnetic field. Owing to the inversion symmetry in bilayers, the photoluminescence helicity should no longer be locked to the valleys. Here we show that the Zeeman splitting, however, persists in 2H-MoTe bilayers, as a result of an additional degree of freedom, namely the layer pseudospin, and spin-valley-layer locking. Unlike monolayers, the Zeeman splitting in bilayers occurs without lifting valley degeneracy. The degree of circularly polarized photoluminescence is tuned with magnetic field from -37% to 37%. Our results demonstrate the control of degree of freedom in bilayer with magnetic field, which makes bilayer a promising platform for spin-valley quantum gates based on magnetoelectric effects.Monolayer transition metal dichalcogenides host a valley splitting in magnetic field analogous to the Zeeman effect. Here, the authors report that the Zeeman splitting still persists in bilayers of MoTe without lifting the valley degeneracy, due to spin-valley-layer coupling.

摘要

原子级薄的单层过渡金属二硫属化物具有自旋和能谷自由度的耦合。由于自旋轨道耦合和空间反演对称性破缺,手性被锁定到相同的能谷,导致在存在面外磁场时出现能谷类似塞曼效应的现象。由于双层结构中的空间反演对称性,光致发光的螺旋性不应再被锁定到能谷。然而在此我们表明,由于一个额外的自由度,即层赝自旋,以及自旋-能谷-层锁定,塞曼分裂在2H-MoTe双层结构中仍然存在。与单层不同,双层中的塞曼分裂发生时不会解除能谷简并。圆偏振光致发光的程度随磁场从-37%调节到37%。我们的结果展示了利用磁场对双层结构中自由度的控制,这使得双层成为基于磁电效应的自旋-能谷量子比特的一个有前景的平台。单层过渡金属二硫属化物在磁场中存在类似于塞曼效应的能谷分裂。在此,作者报道由于自旋-能谷-层耦合,塞曼分裂在MoTe双层结构中仍然存在且不会解除能谷简并。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e4cd/5630581/6a72268d9dc8/41467_2017_927_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e4cd/5630581/1ec56e618007/41467_2017_927_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e4cd/5630581/79622adb705b/41467_2017_927_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e4cd/5630581/22145501fc30/41467_2017_927_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e4cd/5630581/6a72268d9dc8/41467_2017_927_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e4cd/5630581/1ec56e618007/41467_2017_927_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e4cd/5630581/79622adb705b/41467_2017_927_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e4cd/5630581/22145501fc30/41467_2017_927_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e4cd/5630581/6a72268d9dc8/41467_2017_927_Fig4_HTML.jpg

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本文引用的文献

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Phys Rev Lett. 2016 Oct 28;117(18):187401. doi: 10.1103/PhysRevLett.117.187401. Epub 2016 Oct 25.
2
Magnetic-Field-Induced Rotation of Polarized Light Emission from Monolayer WS_{2}.磁场诱导单层WS₂的偏振光发射旋转
Phys Rev Lett. 2016 Aug 12;117(7):077402. doi: 10.1103/PhysRevLett.117.077402.
3
Valley Zeeman Splitting and Valley Polarization of Neutral and Charged Excitons in Monolayer MoTe2 at High Magnetic Fields.
Nanomaterials (Basel). 2023 Oct 10;13(20):2740. doi: 10.3390/nano13202740.
4
Moiré-Assisted Realization of Octahedral MoTe Monolayer.莫尔条纹辅助实现八面体碲化钼单层
Adv Sci (Weinh). 2023 Dec;10(34):e2304461. doi: 10.1002/advs.202304461. Epub 2023 Oct 22.
5
Ferromagnetism emerged from non-ferromagnetic atomic crystals.非铁磁性原子晶体中出现了铁磁性。
Nat Commun. 2023 Jun 29;14(1):3839. doi: 10.1038/s41467-023-39002-6.
6
Impact of indirect transitions on valley polarization in WS and WSe.WS 和 WSe 中间接跃迁对谷极化的影响。
Nanoscale. 2022 Dec 8;14(47):17761-17769. doi: 10.1039/d2nr04800k.
7
Prolonging valley polarization lifetime through gate-controlled exciton-to-trion conversion in monolayer molybdenum ditelluride.通过栅极控制单层碲化钼中激子到三重子的转换来延长谷极化寿命
Nat Commun. 2022 Jul 14;13(1):4101. doi: 10.1038/s41467-022-31672-y.
8
Room temperature near unity spin polarization in 2D Van der Waals heterostructures.二维范德华异质结构中的室温近单位自旋极化
Nat Commun. 2020 Sep 7;11(1):4442. doi: 10.1038/s41467-020-18307-w.
单层MoTe₂中中性和带电激子在高磁场下的谷塞曼分裂和谷极化
Nano Lett. 2016 Jun 8;16(6):3624-9. doi: 10.1021/acs.nanolett.6b00748. Epub 2016 May 11.
4
Exciton diamagnetic shifts and valley Zeeman effects in monolayer WS2 and MoS2 to 65 Tesla.单层WS2和MoS2中激子抗磁位移和谷塞曼效应至65特斯拉。
Nat Commun. 2016 Feb 9;7:10643. doi: 10.1038/ncomms10643.
5
Electrical control of the valley Hall effect in bilayer MoS2 transistors.双层 MoS2 晶体管中谷霍尔效应的电控制。
Nat Nanotechnol. 2016 May;11(5):421-5. doi: 10.1038/nnano.2015.337. Epub 2016 Jan 25.
6
Room Temperature Semiconductor-Metal Transition of MoTe2 Thin Films Engineered by Strain.应变工程调控 MoTe2 薄膜的室温半导体-金属相变。
Nano Lett. 2016 Jan 13;16(1):188-93. doi: 10.1021/acs.nanolett.5b03481. Epub 2015 Dec 31.
7
Robust Excitons and Trions in Monolayer MoTe2.单层 MoTe2 中的稳定激子和双激子
ACS Nano. 2015 Jun 23;9(6):6603-9. doi: 10.1021/acsnano.5b02665. Epub 2015 Jun 11.
8
Indirect-to-direct band gap crossover in few-layer MoTe₂.少层 MoTe₂中的间接-直接带隙交叉。
Nano Lett. 2015 Apr 8;15(4):2336-42. doi: 10.1021/nl5045007. Epub 2015 Mar 27.
9
Breaking of valley degeneracy by magnetic field in monolayer MoSe2.磁场在单层 MoSe2 中打破谷简并。
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10
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Phys Rev Lett. 2014 Dec 31;113(26):266804. doi: 10.1103/PhysRevLett.113.266804. Epub 2014 Dec 23.