Zhou Gang, Wang Dong
MOE Key Laboratory of Organic OptoElectronics and Molecular Engineering, Department of Chemistry, Tsinghua University, Beijing. 100084, People's Republic of China.
Sci Rep. 2015 Jan 29;5:8099. doi: 10.1038/srep08099.
The thermoelectric transport properties of p-type Bi₂Te₃ nanofilms with various quintuple layers (QL) were systematically investigated based on ab initio electronic structure calculations and Boltzmann transport equations. Our results demonstrated that p-type few-quintuple Bi₂Te₃ nanofilms could exhibit high thermoelectric performance. It was found out that the 1QL Bi₂Te₃ nanofilm had the highest ZT value as compared with other nanofilms, which is mainly attributed to the significant enhancement of the density of states near the edge of the valence band resulting from the strong coupling between the top and bottom electronic states and the quantum confinement effect. The dependence of the thermoelectric transport properties on carrier concentration and temperature was also discussed in detail, which can be useful for searching high-efficiency few-quintuple Bi₂Te₃ thermoelectric nanofilms.
基于第一性原理电子结构计算和玻尔兹曼输运方程,系统研究了具有不同五元层数(QL)的p型Bi₂Te₃纳米薄膜的热电输运性质。我们的结果表明,p型少五元层Bi₂Te₃纳米薄膜可展现出高热电性能。研究发现,与其他纳米薄膜相比,1QL Bi₂Te₃纳米薄膜具有最高的ZT值,这主要归因于价带边缘附近态密度的显著增强,这是由顶部和底部电子态之间的强耦合以及量子限制效应所导致的。还详细讨论了热电输运性质对载流子浓度和温度的依赖性,这对于寻找高效少五元层Bi₂Te₃热电纳米薄膜可能是有用的。