单根PbSe纳米线中塞贝克系数的场效应调制

Field-effect modulation of Seebeck coefficient in single PbSe nanowires.

作者信息

Liang Wenjie, Hochbaum Allon I, Fardy Melissa, Rabin Oded, Zhang Minjuan, Yang Peidong

机构信息

Department of Chemistry, University of California at Berkeley, Berkeley, California 94720, USA.

出版信息

Nano Lett. 2009 Apr;9(4):1689-93. doi: 10.1021/nl900377e.

DOI:10.1021/nl900377e

PMID:19309086

Abstract

In this Letter, we present a novel strategy to control the thermoelectric properties of individual PbSe nanowires. Using a field-effect gated device, we were able to tune the Seebeck coefficient of single PbSe nanowires from 64 to 193 microV x K(-1). This direct electrical field control of sigma and S suggests a powerful strategy for optimizing ZT in thermoelectric devices. These results represent the first demonstration of field-effect modulation of the thermoelectric figure of merit in a single semiconductor nanowire. This novel strategy for thermoelectric property modulation could prove especially important in optimizing the thermoelectric properties of semiconductors where reproducible doping is difficult to achieve.

摘要

在本信函中，我们提出了一种控制单个PbSe纳米线热电性能的新策略。通过场效应门控器件，我们能够将单个PbSe纳米线的塞贝克系数从64微伏·开尔文⁻¹调至193微伏·开尔文⁻¹。对电导率σ和塞贝克系数S的这种直接电场控制为优化热电装置中的ZT提供了一种强有力的策略。这些结果首次证明了在单个半导体纳米线中对热电品质因数进行场效应调制。这种用于热电性能调制的新策略在优化难以实现可重复掺杂的半导体的热电性能方面可能尤为重要。