具有铝包覆氮化镓纳米棒的氮化铟镓/氮化镓发光二极管结构中的布洛赫表面等离子体增强蓝光发射。

Bloch surface plasmon enhanced blue emission from InGaN/GaN light-emitting diode structures with Al-coated GaN nanorods.

作者信息

Zhang Guogang, Zhuang Zhe, Guo Xu, Ren Fang-Fang, Liu Bin, Ge Haixiong, Xie Zili, Sun Ling, Zhi Ting, Tao Tao, Li Yi, Zheng Youdou, Zhang Rong

机构信息

Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China. Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, People's Republic of China.

出版信息

Nanotechnology. 2015 Mar 27;26(12):125201. doi: 10.1088/0957-4484/26/12/125201. Epub 2015 Mar 4.

DOI:10.1088/0957-4484/26/12/125201

PMID:25735963

Abstract

InGaN/GaN light-emitting diode structures with Al-coated GaN nanorods were fabricated by using soft ultraviolet nanoimprint lithography. The intensity of light emission was found to be greatly enhanced due to the strong near-fields confined at the interface of Al/GaN and extended to the multiple quantum wells (MQWs) active region. The dynamics of carrier recombination and plasmon-enhanced Raman scattering were also investigated, providing a progressive view on the effective energy transfer between MQWs and surface plasmons.

摘要

采用软紫外纳米压印光刻技术制备了具有镀铝氮化镓纳米棒的氮化铟镓/氮化镓发光二极管结构。由于在铝/氮化镓界面处受限并延伸到多量子阱（MQW）有源区的强近场，发光强度被发现大大增强。还研究了载流子复合动力学和等离子体增强拉曼散射，为多量子阱和表面等离子体之间的有效能量转移提供了一个递进的观点。