†Nanoelectronics Lab, Stanford University, Stanford, California 94305, United States.
‡Nanoelectronic Devices Laboratory, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne 1015, Switzerland.
ACS Nano. 2015 Mar 24;9(3):2836-42. doi: 10.1021/nn506817y. Epub 2015 Mar 12.
We report wafer-level fabrication of resonant-body carbon nanotube (CNT) field-effect transistors (FETs) in a dual-gate configuration. An integration density of >10(6) CNTFETs/cm(2), an assembly yield of >80%, and nanoprecision have been simultaneously obtained. Through combined chemical and thermal treatments, hysteresis-free (in vacuum) suspended-body CNTFETs have been demonstrated. Electrostatic actuation by lateral gate and FET-based readout of mechanical resonance have been achieved at room temperature. Both upward and downward in situ frequency tuning has been experimentally demonstrated in the dual-gate architecture. The minuscule mass, high resonance frequency, and in situ tunability of the resonant CNTFETs offer promising features for applications in radio frequency signal processing and ultrasensitive sensing.
我们报告了在双栅结构中晶圆级制造共振体碳纳米管（CNT）场效应晶体管（FET）。同时获得了超过 10(6) CNTFETs/cm(2)的集成密度、超过 80%的组装产率和纳米精度。通过组合化学和热处理，已经证明了无滞后（在真空中）悬浮体 CNTFET。在室温下通过横向栅极进行静电致动和基于 FET 的机械共振读出已经实现。在双栅结构中已经实验证明了向上和向下的原位频率调谐。共振 CNTFET 的微小质量、高共振频率和原位可调性为在射频信号处理和超高灵敏度传感中的应用提供了有前景的特性。
