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硝酸铁辅助通过碳热还原氮化法从石英和石墨大规模合成氮化硅纳米带及其光致发光特性

Fe(NO3)3-assisted large-scale synthesis of Si₃N₄ nanobelts from quartz and graphite by carbothermal reduction-nitridation and their photoluminescence properties.

作者信息

Liu Shuyue, Fang Minghao, Huang Zhaohui, Huang Juntong, Ji Haipeng, Liu Haitao, Liu Yan-gai, Wu Xiaowen

机构信息

School of Materials Science and Technology, Beijing Key Laboratory of Materials Utilization of Nonmetallic Minerals and Solid Wastes, National Laboratory of Mineral Materials, China University of Geosciences, Beijing, 100083.

College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, UK.

出版信息

Sci Rep. 2015 Mar 11;5:8998. doi: 10.1038/srep08998.

Abstract

The large-scale synthesis of Si3N4 nanobelts from quartz and graphite on a graphite-felt substrate was successfully achieved by catalyst-assisted carbothermal reduction-nitridation. The phase composition, morphology, and microstructure of Si3N4 nanobelts were investigated by X-ray diffraction, Fourier transform infrared spectroscopy, field-emission scanning electron microscopy, energy-dispersive spectroscopy, transmission electron microscopy, and high-resolution transmission electron microscopy. The Si3N4 nanobelts were ~4-5 mm long and ~60 nm thick and exhibited smooth surfaces and flexible shapes. The Si3N4 nanobelts were well crystallized and grow along the [101] direction. The growth is dominated by the combined mechanisms of vapor-liquid-solid base growth and vapor-solid tip growth. The Fe(NO3)3 played a crucial role in promoting the nanobelt formation in the initial stage. The room-temperature photoluminescence spectrum of Si3N4 nanobelts consists of three emission peaks centered at 413, 437, and 462 nm, indicating potential applications in optoelectronic nanodevices.

摘要

通过催化剂辅助的碳热还原氮化反应,成功地在石墨毡基底上由石英和石墨大规模合成了Si3N4纳米带。采用X射线衍射、傅里叶变换红外光谱、场发射扫描电子显微镜、能谱、透射电子显微镜和高分辨率透射电子显微镜对Si3N4纳米带的相组成、形貌和微观结构进行了研究。Si3N4纳米带长约4-5 mm,厚约60 nm,表面光滑,形状灵活。Si3N4纳米带结晶良好,沿[101]方向生长。其生长主要由气-液-固基生长和气-固尖端生长的联合机制主导。Fe(NO3)3在初始阶段促进纳米带形成过程中起关键作用。Si3N4纳米带的室温光致发光光谱由三个分别位于413、437和462 nm处的发射峰组成,表明其在光电子纳米器件中具有潜在应用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4834/4355634/4abe20bf7a12/srep08998-f1.jpg

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