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半导体氧化物纳米带

Nanobelts of semiconducting oxides.

作者信息

Pan Z W, Dai Z R, Wang Z L

机构信息

School of Materials Science and Engineering, School of Chemistry and Biochemistry, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA.

出版信息

Science. 2001 Mar 9;291(5510):1947-9. doi: 10.1126/science.1058120.

Abstract

Ultralong beltlike (or ribbonlike) nanostructures (so-called nanobelts) were successfully synthesized for semiconducting oxides of zinc, tin, indium, cadmium, and gallium by simply evaporating the desired commercial metal oxide powders at high temperatures. The as-synthesized oxide nanobelts are pure, structurally uniform, and single crystalline, and most of them are free from defects and dislocations. They have a rectanglelike cross section with typical widths of 30 to 300 nanometers, width-to-thickness ratios of 5 to 10, and lengths of up to a few millimeters. The beltlike morphology appears to be a distinctive and common structural characteristic for the family of semiconducting oxides with cations of different valence states and materials of distinct crystallographic structures. The nanobelts could be an ideal system for fully understanding dimensionally confined transport phenomena in functional oxides and building functional devices along individual nanobelts.

摘要

通过在高温下简单蒸发所需的商用金属氧化物粉末,成功合成了锌、锡、铟、镉和镓的半导体氧化物的超长带状(或带状)纳米结构(所谓的纳米带)。所合成的氧化物纳米带纯净、结构均匀且为单晶,并且大多数无缺陷和位错。它们具有矩形横截面,典型宽度为30至300纳米,宽高比为5至10,长度可达几毫米。对于具有不同价态阳离子和不同晶体结构材料的半导体氧化物家族而言,带状形态似乎是一种独特且常见的结构特征。纳米带可能是全面理解功能氧化物中尺寸受限输运现象以及沿着单个纳米带构建功能器件的理想体系。

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