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通过激光热解一步合成硅碳纳米颗粒:用于锂离子电池的高容量负极材料。

One-step synthesis of Si@C nanoparticles by laser pyrolysis: high-capacity anode material for lithium-ion batteries.

作者信息

Sourice Julien, Quinsac Axelle, Leconte Yann, Sublemontier Olivier, Porcher Willy, Haon Cedric, Bordes Arnaud, De Vito Eric, Boulineau Adrien, Jouanneau Si Larbi Séverine, Herlin-Boime Nathalie, Reynaud Cécile

机构信息

†CNRS UMR 3685, NIMBE, IRAMIS, CEA, F-91191 Gif sur Yvette, France.

‡Université Grenoble Alpes, F-38000, Grenoble, France.

出版信息

ACS Appl Mater Interfaces. 2015 Apr 1;7(12):6637-44. doi: 10.1021/am5089742. Epub 2015 Mar 19.

DOI:10.1021/am5089742
PMID:25761636
Abstract

Carbon-covered silicon nanoparticles (Si@C) were synthesized for the first time by a one-step continuous process in a novel two stages laser pyrolysis reactor. Crystallized silicon cores formed in a first stage were covered in the second stage by a continuous shell mainly consisting in low organized sp(2) carbon. At the Si/C interface silicon carbide is absent. Moreover, the presence of silicon oxide is reduced compared to materials synthesized in several steps, allowing the use of such material as promising anode material in lithium-ion batteries (LIB). Auger Electron Spectroscopy (AES) analysis of the samples at both SiKLL and SiLVV edges proved the uniformity of the carbon coating. Cyclic voltammetry was used to compare the stability of Si and Si@C active materials. In half-cell configuration, Si@C exhibits a high and stable capacity of 2400 mAh g(-1) at C/10 and up to 500 mAh g(-1) over 500 cycles at 2C. The retention of the capacity is attributed to the protective effect of the carbon shell, which avoids direct contact between the silicon surface and the electrolyte.

摘要

首次在新型两级激光热解反应器中通过一步连续工艺合成了碳包覆硅纳米颗粒(Si@C)。在第一阶段形成的结晶硅核在第二阶段被主要由低有序sp(2)碳组成的连续壳层包覆。在Si/C界面处不存在碳化硅。此外,与多步合成的材料相比,氧化硅的存在减少了,这使得这种材料有望用作锂离子电池(LIB)的阳极材料。对样品在SiKLL和SiLVV边缘进行俄歇电子能谱(AES)分析,证明了碳涂层的均匀性。使用循环伏安法比较Si和Si@C活性材料的稳定性。在半电池配置中,Si@C在C/10时表现出2400 mAh g(-1)的高稳定容量,在2C下5​​00次循环中高达500 mAh g(-1)。容量的保持归因于碳壳的保护作用,它避免了硅表面与电解质之间的直接接触。

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