Guha S, Schmalz K, Wenger Ch, Herzel F
IHP, Leibniz Institute for Innovative Microelectronics, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.
Analyst. 2015 May 7;140(9):3262-72. doi: 10.1039/c5an00187k. Epub 2015 Mar 20.
In this report we propose a sensor architecture and a corresponding read-out technique on silicon for the detection of dynamic capacitance change. This approach can be applied to rapid particle counting and single particle sensing in a fluidic system. The sensing principle is based on capacitance variation of an interdigitated electrode (IDE) structure embedded in an oscillator circuit. The capacitance scaling of the IDE results in frequency modulation of the oscillator. A demodulator architecture is employed to provide a read-out of the frequency modulation caused by the capacitance change. A self-calibrating technique is employed at the read-out amplifier stage. The capacitance variation of the IDE due to particle flow causing frequency modulation and the corresponding demodulator read-out has been analytically modelled. Experimental verification of the established model and the functionality of the sensor chip were shown using a modulating capacitor independent of fluidic integration. The initial results show that the sensor is capable of detecting frequency changes of the order of 100 parts per million (PPM), which translates to a shift of 1.43 MHz at 14.3 GHz operating frequency. It is also shown that a capacitance change every 3 μs can be accurately detected.
在本报告中,我们提出了一种用于检测动态电容变化的基于硅的传感器架构及相应的读出技术。这种方法可应用于流体系统中的快速粒子计数和单粒子传感。传感原理基于嵌入振荡器电路中的叉指电极(IDE)结构的电容变化。IDE的电容缩放导致振荡器的频率调制。采用解调器架构来读出由电容变化引起的频率调制。在读出放大器阶段采用了自校准技术。已对由于粒子流导致频率调制的IDE电容变化及相应的解调器读出进行了分析建模。使用独立于流体集成的调制电容器展示了所建立模型和传感器芯片功能的实验验证。初步结果表明,该传感器能够检测到百万分之一百(PPM)量级的频率变化,这在14.3 GHz工作频率下相当于1.43 MHz的偏移。还表明每3微秒的电容变化能够被准确检测到。