Kastl Christoph, Karnetzky Christoph, Karl Helmut, Holleitner Alexander W
1] Walter Schottky Institut and Physik-Department, Technische Universität München, Am Coulombwall 4a, 85748 Garching, Germany [2] Nanosystems Initiative Munich (NIM), Schellingstr. 4, 80799 München, Germany.
Institute of Physics, University of Augsburg, 86135 Augsburg, Germany.
Nat Commun. 2015 Mar 26;6:6617. doi: 10.1038/ncomms7617.
In recent years, a class of solid-state materials, called three-dimensional topological insulators, has emerged. In the bulk, a topological insulator behaves like an ordinary insulator with a band gap. At the surface, conducting gapless states exist showing remarkable properties such as helical Dirac dispersion and suppression of backscattering of spin-polarized charge carriers. The characterization and control of the surface states via transport experiments is often hindered by residual bulk contributions. Here we show that surface currents in Bi2Se3 can be controlled by circularly polarized light on a picosecond timescale with a fidelity near unity even at room temperature. We reveal the temporal separation of such ultrafast helicity-dependent surface currents from photo-induced thermoelectric and drift currents in the bulk. Our results uncover the functionality of ultrafast optoelectronic devices based on surface currents in topological insulators.
近年来,一类称为三维拓扑绝缘体的固态材料出现了。在体相中,拓扑绝缘体的行为类似于具有带隙的普通绝缘体。在表面,存在无隙导电态,表现出诸如螺旋狄拉克色散和自旋极化电荷载流子背散射抑制等显著特性。通过输运实验对表面态进行表征和控制常常受到体相残余贡献的阻碍。在此我们表明,即使在室温下,Bi2Se3中的表面电流也能在皮秒时间尺度上由圆偏振光控制,保真度接近1。我们揭示了这种超快螺旋度相关表面电流与体相中的光致热电电流和漂移电流在时间上的分离。我们的结果揭示了基于拓扑绝缘体表面电流的超快光电器件的功能。