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石墨烯单晶:尺寸和形态工程。

Graphene single crystals: size and morphology engineering.

机构信息

Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, PR China; University of Chinese Academy of Sciences, Beijing, 100049, PR China.

出版信息

Adv Mater. 2015 May 13;27(18):2821-37. doi: 10.1002/adma.201405887. Epub 2015 Mar 21.

Abstract

Recently developed chemical vapor deposition (CVD) is considered as an effective way to large-area and high-quality graphene preparation due to its ultra-low cost, high controllability, and high scalability. However, CVD-grown graphene film is polycrystalline, and composed of numerous grains separated by grain boundaries, which are detrimental to graphene-based electronics. Intensive investigations have been inspired on the controlled growth of graphene single crystals with the absence of intrinsic defects. As the two most concerned parameters, the size and morphology serve critical roles in affecting properties and understanding the growth mechanism of graphene crystals. Therefore, a precise tuning of the size and morphology will be of great significance in scale-up graphene production and wide applications. Here, recent advances in the synthesis of graphene single crystals on both metals and dielectric substrates by the CVD method are discussed. The review mainly covers the size and morphology engineering of graphene single crystals. Furthermore, recent progress in the growth mechanism and device applications of graphene single crystals are presented. Finally, the opportunities and challenges are discussed.

摘要

近年来发展起来的化学气相沉积(CVD)被认为是一种大面积、高质量石墨烯制备的有效方法,因为它具有超低的成本、高的可控性和高的可扩展性。然而,CVD 生长的石墨烯薄膜是多晶的,由许多晶粒通过晶界分隔开来,这对基于石墨烯的电子学是不利的。由于缺乏本征缺陷,人们对石墨烯单晶的可控生长进行了大量的研究。作为最受关注的两个参数,尺寸和形态对石墨烯晶体的性能和生长机制的理解起着至关重要的作用。因此,精确地调节尺寸和形态对于大规模生产石墨烯和广泛应用具有重要意义。本文讨论了 CVD 法在金属和介电衬底上合成石墨烯单晶的最新进展。综述主要涵盖了石墨烯单晶的尺寸和形态工程。此外,还介绍了石墨烯单晶生长机制和器件应用的最新进展。最后讨论了机遇和挑战。

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