†School of Chemistry, ‡School of Physics, and §Center for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College, Dublin 2, Ireland.
Nano Lett. 2015 May 13;15(5):2881-6. doi: 10.1021/nl5045154. Epub 2015 Apr 3.
We describe the fabrication, operation principles, and simulation of a coherent single-atom quantum interference device (QID) structure on Si(100) controlled by the properties of single atoms. The energy and spatial distribution of the wave functions associated with the device are visualized by scanning tunneling spectroscopy and the amplitude and phase of the evanescent wave functions that couple into the quantum well states are directly measured, including the action of an electrostatic gate. Density functional theory simulations were employed to simulate the electronic structure of the device structure, which is in excellent agreement with the measurements. Simulations of device transmission demonstrate that our coherent single-atom QID can have ON-OFF ratios in excess of 10(3) with potentially minimal power dissipation.
我们描述了一种基于单原子性质控制的 Si(100)上相干单原子量子干涉器件(QID)结构的制造、工作原理和模拟。通过扫描隧道光谱学可视化了与器件相关的波函数的能量和空间分布,并且直接测量了耦合到量子阱态的消逝波函数的幅度和相位,包括静电门的作用。密度泛函理论模拟被用来模拟器件结构的电子结构,这与测量结果非常吻合。器件传输的模拟表明,我们的相干单原子 QID 可以具有超过 10(3)的 ON-OFF 比,潜在的功耗最小。