High temperature operation of far infrared (λ ≈20 µm) InAs/AlSb quantum cascade lasers with dielectric waveguide.

We demonstrate the high temperature operation, up to 80°C, of quantum cascade lasers emitting at a wavelength of 20 µm. The lasers are based on the InAs/AlSb materials and take benefit of a low loss plasmon-enhanced dielectric waveguide. The waveguide consists of doped InAs cladding layers and low-doped InAs spacers. For 2.9-mm-long devices, the threshold current density is 4.3 kA/cm and the measured peak output power is 7 mW at room temperature. The cavity length dependence of the threshold currents also indicates that very large optical gain is achieved and effectively overcome the strong free carrier absorption.