Nguyen-Van Hoang, Baranov Alexei N, Loghmari Zeineb, Cerutti Laurent, Rodriguez Jean-Baptiste, Tournet Julie, Narcy Gregoire, Boissier Guilhem, Patriarche Gilles, Bahriz Michael, Tournié Eric, Teissier Roland
IES, University of Montpellier, CNRS, Montpellier, France.
Centre for Nanosciences and Nanotechnology, CNRS, University Paris-Sud, Marcoussis, France.
Sci Rep. 2018 May 8;8(1):7206. doi: 10.1038/s41598-018-24723-2.
Technological platforms offering efficient integration of III-V semiconductor lasers with silicon electronics are eagerly awaited by industry. The availability of optoelectronic circuits combining III-V light sources with Si-based photonic and electronic components in a single chip will enable, in particular, the development of ultra-compact spectroscopic systems for mass scale applications. The first circuits of such type were fabricated using heterogeneous integration of semiconductor lasers by bonding the III-V chips onto silicon substrates. Direct epitaxial growth of interband III-V laser diodes on silicon substrates has also been reported, whereas intersubband emitters grown on Si have not yet been demonstrated. We report the first quantum cascade lasers (QCLs) directly grown on a silicon substrate. These InAs/AlSb QCLs grown on Si exhibit high performances, comparable with those of the devices fabricated on their native InAs substrate. The lasers emit near 11 µm, the longest emission wavelength of any laser integrated on Si. Given the wavelength range reachable with InAs/AlSb QCLs, these results open the way to the development of a wide variety of integrated sensors.
行业急切期待能将III-V族半导体激光器与硅电子器件高效集成的技术平台。在单个芯片中结合III-V族光源与基于硅的光子和电子元件的光电子电路的出现，将尤其推动面向大规模应用的超紧凑型光谱系统的发展。此类的首批电路是通过将III-V族芯片键合到硅衬底上，利用半导体激光器的异质集成制造而成。也有报道称在硅衬底上直接外延生长带间III-V族激光二极管，而在硅上生长的子带间发射体尚未得到证实。我们报道了首次在硅衬底上直接生长的量子级联激光器（QCL）。这些在硅上生长的InAs/AlSb QCL表现出高性能，与在其原生InAs衬底上制造的器件相当。这些激光器在11微米附近发射，这是集成在硅上的任何激光器中最长的发射波长。鉴于InAs/AlSb QCL可达到的波长范围，这些结果为开发各种集成传感器开辟了道路。
