Wang Jun, Liu Zhuoliang, Liu Hao, Bai Yiming, Ma Bojie, Xiao Chunyang, Jiang Chen, Li Jiachen, Wang Haijing, Jia Yanxing, Liu Kai, Yang Yisu, Wang Qi, Huang Yongqing, Ren Xiaomin
Opt Express. 2022 Mar 28;30(7):11563-11571. doi: 10.1364/OE.454895.
We report electrically pumped continuous-wave (CW) InAs/GaAs quantum dot lasers directly grown on planar exact silicon (001) with asymmetric waveguide structures. Surface hydrogen-annealing for the GaAs/ Si (001) templates and low-temperature growth for GaInP upper cladding layers were combined in the growth of the laser structure to achieve a high slope efficiency. For the broad-stripe edge-emitting lasers with 2-mm cavity length and 20-µm stripe width made from the above laser structure, a threshold current density of 203.5 A/cm and a single-facet slope efficiency of 0.158 W/A are achieved at ∼1.31 µm band under CW conditions. The extrapolated mean-time-to-failure reaches up to 21000 hours at room temperature, which is deduced from the data measured from C-mount packaged devices. Importantly, these results can provide a practical strategy to realize 1.3 µm wavelength band distributed feedback lasers directly on planar exact Si (001) templates with thin buffer layers.
我们报道了在具有非对称波导结构的平面精确硅（001）上直接生长的电泵浦连续波（CW）InAs/GaAs量子点激光器。在激光结构生长过程中，将GaAs/Si（001）模板的表面氢退火和GaInP上包层的低温生长相结合，以实现高斜率效率。对于由上述激光结构制成的腔长为2 mm、条宽为20 µm的宽条边发射激光器，在连续波条件下，在~1.31 µm波段实现了203.5 A/cm的阈值电流密度和0.158 W/A的单面斜率效率。从C型封装器件测量的数据推断，室温下的外推平均无故障时间高达21000小时。重要的是，这些结果可以提供一种实用策略，以直接在具有薄缓冲层的平面精确Si（001）模板上实现1.3 µm波段分布反馈激光器。
