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辐射模式光学显微镜下的石墨烯生长研究。

Radiation-mode optical microscopy on the growth of graphene.

机构信息

Department of Chemistry, School of Science, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan.

1] Department of Chemistry, School of Science, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan [2] Department of Complexity Science and Engineering, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan.

出版信息

Nat Commun. 2015 Apr 10;6:6834. doi: 10.1038/ncomms7834.

DOI:10.1038/ncomms7834
PMID:25857589
Abstract

Chemical vapour deposition (CVD) growth of graphene has attracted much attention, aiming at the mass production of large-area and high-quality specimens. To optimize the growth condition, CVD grown graphene is conventionally characterized after synthesis. Real-time observation during graphene growth enables us to understand the growth mechanism and control the growth more easily. Here we report the optical microscope observation of the CVD growth of graphene in real time by focusing the radiation emitted from the growing graphene, which we call 'radiation-mode optical microscopy'. We observe the growth and shrinkage of graphene in response to the switching on and off of the methane supply. Analysis of the growth feature reveals that the attachment and detachment of carbon precursors are the rate-determining factor in the CVD growth of graphene. We expect radiation-mode optical microscopy to be applicable to the other crystal growth at high temperatures in various atmospheres.

摘要

化学气相沉积(CVD)生长石墨烯引起了广泛关注,旨在大规模生产大面积、高质量的样本。为了优化生长条件,CVD 生长的石墨烯通常在合成后进行特性分析。在石墨烯生长过程中的实时观察使我们能够更好地理解生长机制并进行控制。在这里,我们报告了通过聚焦从生长中的石墨烯辐射出的辐射来实时观察 CVD 生长石墨烯的光学显微镜观察,我们称之为“辐射模式光学显微镜”。我们观察到石墨烯的生长和收缩对甲烷供应的开关的响应。对生长特征的分析表明,碳前体的附着和脱附是 CVD 生长石墨烯的速率决定因素。我们期望辐射模式光学显微镜能够适用于各种气氛下高温下的其他晶体生长。

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