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从气体成分和温度角度对火焰沉积生长的少层石墨烯的动力学研究。

Kinetic studies of few-layer graphene grown by flame deposition from the perspective of gas composition and temperature.

作者信息

Ismail Edhuan, Fauzi Fatin Bazilah, Mohamed Mohd Ambri, Mohd Yasin Mohd Fairus, Mohd Abid Mohd Asyadi Azam, Yaacob Iskandar Idris, Md Din Muhamad Faiz, Ani Mohd Hanafi

机构信息

Department of Manufacturing and Materials, Kulliyyah of Engineering, International Islamic University Malaysia P. O. Box 10 50728 Kuala Lumpur Malaysia

Institute of Microengineering and Nanoelectronic, Universiti Kebangsaan Malaysia 43600 Bangi Malaysia.

出版信息

RSC Adv. 2019 Jul 4;9(36):21000-21008. doi: 10.1039/c9ra01257e. eCollection 2019 Jul 1.

DOI:10.1039/c9ra01257e
PMID:35515528
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9065698/
Abstract

Studies on depositions of chemical vapour deposition (CVD) diamond films have shown that flame combustion has the highest deposition rates without involving microwave plasma and direct current arc. Thus, here we report on our study of few-layer graphene grown by flame deposition. A horizontal CVD reactor was modified for the synthesis of flame deposition of few-layer graphene on a Cu substrate. It was found that graphene obtained has comparable quality to that obtained with other flame deposition setups reported in the literature as determined from Raman spectroscopy, sheet resistance, and transmission electron microscopy. Calculation of the chemical kinetics reveals a gas phase species that has a close correlation to the growth rate of graphene. This was further correlated with van't Hoff analysis of the reaction, which shows that the growth reaction has a single dominating mechanism for temperatures in the range of 400 °C to 1000 °C. Arrhenius analysis also was found to be in good agreement with this result. This study shows few-layer graphene growth proceeds through different pathways from a CVD grown graphene and also highlights flame deposition as a viable method for graphene growth.

摘要

对化学气相沉积（CVD）金刚石薄膜的沉积研究表明，在不涉及微波等离子体和直流电弧的情况下，火焰燃烧具有最高的沉积速率。因此，在此我们报告我们对通过火焰沉积生长的少层石墨烯的研究。对一个卧式CVD反应器进行了改进，用于在铜衬底上合成少层石墨烯的火焰沉积。通过拉曼光谱、表面电阻和透射电子显微镜测定发现，所获得的石墨烯与文献中报道的其他火焰沉积装置所获得的石墨烯具有相当的质量。化学动力学计算揭示了一种与石墨烯生长速率密切相关的气相物质。这进一步与该反应的范特霍夫分析相关联，该分析表明，对于400℃至1000℃范围内的温度，生长反应具有单一主导机制。阿仑尼乌斯分析也与该结果高度一致。这项研究表明，少层石墨烯的生长通过与CVD生长的石墨烯不同的途径进行，并且还突出了火焰沉积作为一种可行的石墨烯生长方法。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ed99/9065698/6cc4b8ae449b/c9ra01257e-f9.jpg
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