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四极杆离子阱内离子-离子反应的GPU辅助模拟研究

GPU Assisted Simulation Study of Ion-Ion Reactions within Quadrupole Ion Traps.

作者信息

Guo Dan, He Muyi, Wang Yuzhuo, Xiong Xingchuang, Fang Xiang, Xu Wei

机构信息

School of Life Science, Beijing Institute of Technology, Beijing, 100081, China.

出版信息

J Am Soc Mass Spectrom. 2015 Jul;26(7):1233-41. doi: 10.1007/s13361-015-1098-x. Epub 2015 Apr 14.

Abstract

In this study, a gas-phase ion-ion reaction model was developed, and it was integrated into an ion trajectory simulation program. GPU parallel computation techniques were also applied to accelerate the simulation process. With this simulation tool, the dependence of ion-ion reaction rate within 3D quadrupole ion traps on both ion trap operation parameters and the characteristics of reaction pair were investigated. It was found that the m/z values and charge states of ions have significant influences on the reaction rate. Moreover, higher ion-ion reaction rate was achieved under higher trapping voltages and higher buffer gas pressures. Furthermore, secondary reaction and/or neutralization of ETD fragment ions were observed from simulation. The reaction and/or neutralization rate depends on the charge state and m/z of each fragment ion.

摘要

在本研究中,开发了一种气相离子-离子反应模型,并将其集成到离子轨迹模拟程序中。还应用了GPU并行计算技术来加速模拟过程。利用该模拟工具,研究了三维四极离子阱内离子-离子反应速率对离子阱操作参数和反应对特性的依赖性。发现离子的m/z值和电荷态对反应速率有显著影响。此外,在较高的捕获电压和较高的缓冲气体压力下可实现更高的离子-离子反应速率。此外,从模拟中观察到了ETD碎片离子的二次反应和/或中和。反应和/或中和速率取决于每个碎片离子的电荷态和m/z。

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