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室温下石墨堆垛层错处捕获磁通引起的持续电流的局域化研究

On the Localization of Persistent Currents Due to Trapped Magnetic Flux at the Stacking Faults of Graphite at Room Temperature.

作者信息

Ariskina Regina, Stiller Markus, Precker Christian E, Böhlmann Winfried, Esquinazi Pablo D

机构信息

Division of Superconductivity and Magnetism, Felix-Bloch Institute for Solid State Physics, University of Leipzig, 04103 Leipzig, Germany.

Zollsoft Praxissoftware GmbH, Ernst-Haeckel-Platz 5/6, 07745 Jena, Germany.

出版信息

Materials (Basel). 2022 May 10;15(10):3422. doi: 10.3390/ma15103422.

Abstract

Granular superconductivity at high temperatures in graphite can emerge at certain two-dimensional (2D) stacking faults (SFs) between regions with twisted (around the c-axis) or untwisted crystalline regions with Bernal (ABA…) and/or rhombohedral (ABCABCA…) stacking order. One way to observe experimentally such 2D superconductivity is to measure the frozen magnetic flux produced by a permanent current loop that remains after removing an external magnetic field applied normal to the SFs. Magnetic force microscopy was used to localize and characterize such a permanent current path found in one natural graphite sample out of ∼50 measured graphite samples of different origins. The position of the current path drifts with time and roughly follows a logarithmic time dependence similar to the one for flux creep in type II superconductors. We demonstrate that a ≃10 nm deep scratch on the sample surface at the position of the current path causes a change in its location. A further scratch was enough to irreversibly destroy the remanent state of the sample at room temperature. Our studies clarify some of the reasons for the difficulties of finding a trapped flux in a remanent state at room temperature in graphite samples with SFs.

摘要

在具有扭曲(围绕c轴)或未扭曲的具有伯纳尔(ABA…)和/或菱面体(ABCABCA…)堆叠顺序的晶体区域之间的某些二维(2D)堆垛层错(SFs)处,石墨中高温下会出现颗粒超导性。实验观察这种二维超导性的一种方法是测量由永久电流环产生的冻结磁通量,该电流环在去除垂直于SFs施加的外部磁场后仍然存在。在大约50个不同来源的测量石墨样品中,使用磁力显微镜对在一个天然石墨样品中发现的这种永久电流路径进行定位和表征。电流路径的位置随时间漂移,大致遵循类似于II型超导体中磁通蠕变的对数时间依赖性。我们证明,在电流路径位置的样品表面上约10 nm深的划痕会导致其位置发生变化。进一步的划痕足以在室温下不可逆地破坏样品的剩余状态。我们的研究阐明了在具有SFs的石墨样品中在室温下难以找到剩余状态下的俘获磁通的一些原因。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ffd6/9147148/af7f8f70176e/materials-15-03422-g001.jpg

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