Moser Matthew L, Pekker Aron, Tian Xiaojuan, Bekyarova Elena, Itkis Mikhail E, Haddon Robert C
Department of Chemistry, ‡Center for Nanoscale Science and Engineering, and §Department of Chemical Engineering, University of California , Riverside, California 92521, United States.
ACS Appl Mater Interfaces. 2015 Dec 30;7(51):28013-8. doi: 10.1021/acsami.5b00942. Epub 2015 Apr 23.
We spectroscopically analyze the effect of e-beam deposition of lanthanide metals on the electronic structure and conductivities of films of semiconducting (SC) single-walled carbon nanotubes (SWNTs) in high vacuum. We employ near-infrared and Raman spectroscopy to interpret the changes in the electronic structure of SWNTs on exposure to small amounts of the lanthanides (Ln = Sm, Eu, Gd, Dy, Ho, Yb), based on the behavior of the reference metals (M = Li, Cr) which are taken to exemplify ionic and covalent bonding, respectively. The analysis shows that while the lanthanides are more electropositive than the transition metals, in most cases they exhibit similar conductivity behavior which we interpret in terms of the formation of covalent bis-hexahapto bonds [(η(6)-SWNT)M(η(6)-SWNT), where M = La, Nd, Gd, Dy, Ho]. However, only M = Eu, Sm, Yb show the continually increasing conductivity characteristic of Li, and this supports our contention that these metals provide the first examples of mixed covalent-ionic bis-hexahapto bonds [(η(6)-SWNT)M(η(6)-SWNT), where M = Sm, Eu, Yb].
我们在高真空环境下,通过光谱分析研究了镧系金属电子束沉积对半导体(SC)单壁碳纳米管(SWNT)薄膜电子结构和电导率的影响。我们利用近红外光谱和拉曼光谱,基于分别代表离子键和共价键的参考金属(M = Li,Cr)的行为,来解释SWNT在暴露于少量镧系元素(Ln = Sm、Eu、Gd、Dy、Ho、Yb)时电子结构的变化。分析表明,虽然镧系元素比过渡金属的电正性更强,但在大多数情况下,它们表现出相似的导电行为,我们将其解释为共价双六配位键[(η(6)-SWNT)M(η(6)-SWNT),其中M = La、Nd、Gd、Dy、Ho]的形成。然而,只有M = Eu、Sm、Yb表现出Li所具有的电导率持续增加的特性,这支持了我们的观点,即这些金属提供了混合共价 - 离子双六配位键[(η(6)-SWNT)M(η(6)-SWNT),其中M = Sm、Eu、Yb]的首个实例。