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原子连接对单壁碳纳米管薄膜网络渗流的影响。

Effect of atomic interconnects on percolation in single-walled carbon nanotube thin film networks.

机构信息

Department of Chemical Engineering, University of California , Riverside, California 92521, United States.

出版信息

Nano Lett. 2014 Jul 9;14(7):3930-7. doi: 10.1021/nl501212u. Epub 2014 Jun 3.

Abstract

The formation of covalent bonds to single-walled carbon nanotube (SWNT) or graphene surfaces usually leads to a decrease in the electrical conductivity and mobility as a result of the structural rehybridization of the functionalized carbon atoms from sp(2) to sp(3). In the present study, we explore the effect of metal deposition on semiconducting (SC-) and metallic (MT-) SWNT thin films in the vicinity of the percolation threshold and we are able to clearly delineate the effects of weak physisorption, ionic chemisorption with charge transfer, and covalent hexahapto (η(6)) chemisorption on these percolating networks. The results support the idea that for those metals capable of forming bis-hexahapto-bonds, the generation of covalent (η(6)-SWNT)M(η(6)-SWNT) interconnects provides a conducting pathway in the SWNT films and establishes the transition metal bis-hexahapto organometallic bond as an electronically conjugating linkage between graphene surfaces.

摘要

共价键的形成,单壁碳纳米管(SWNT)或石墨烯表面通常会导致电导率和迁移率的降低,这是由于功能化碳原子的结构重杂化从 sp(2)到 sp(3)。在本研究中,我们探讨了金属沉积对半导体(SC-)和金属(MT-)SWNT 薄膜在渗流阈值附近的影响,并且能够清楚地区分弱物理吸附、离子化学吸附与电荷转移以及六配位(η(6))化学吸附对这些渗流网络的影响。结果支持这样一种观点,即对于那些能够形成双六配位键的金属,共价(η(6)-SWNT)M(η(6)-SWNT)的生成连接提供了 SWNT 薄膜中的导电途径,并确立了过渡金属双六配位有机金属键作为石墨烯表面之间的电子共轭连接。

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