单壁碳纳米管网络的电子特性。

Electronic properties of single-walled carbon nanotube networks.

作者信息

Bekyarova Elena, Itkis Mikhail E, Cabrera Nelson, Zhao Bin, Yu Aiping, Gao Junbo, Haddon Robert C

机构信息

Center for Nanoscale Science and Engineering, University of California, Riverside, California 92521, USA.

出版信息

J Am Chem Soc. 2005 Apr 27;127(16):5990-5. doi: 10.1021/ja043153l.

DOI:10.1021/ja043153l

PMID:15839699

Abstract

We present a study on the electronic behavior of films of as-prepared and purified single-walled carbon nanotubes (SWNTs) and demonstrate the important role that chemical functionalization plays in modifying their electronic properties, which in turn throws further light on the mechanism of action of SWNT-based sensors. Films of electric arc SWNTs were prepared by spraying, and optical spectroscopy was used to measure the effective film thickness. The room-temperature conductivities (sigma(RT)) of thin films deposited from as-prepared and purified SWNTs are in the range sigma(RT) = 250-400 S/cm, and the nonmetallic temperature dependence of the conductivity indicates the presence of tunneling barriers, which dominate the film conductivity. Chemical functionalization of SWNTs with octadecylamine (ODA) and poly(m-aminobenzenesulfonic acid) (PABS) significantly decreases the conductivity; sigma(RT) = 3 and 0.3 S/cm for SWNT-ODA and SWNT-PABS, respectively.

摘要

我们展示了一项关于制备态和纯化态单壁碳纳米管（SWNTs）薄膜电子行为的研究，并证明了化学功能化在改变其电子特性方面所起的重要作用，这反过来又进一步揭示了基于SWNT的传感器的作用机制。通过喷涂制备电弧法SWNTs薄膜，并使用光谱学测量有效薄膜厚度。由制备态和纯化态SWNTs沉积的薄膜在室温下的电导率（σ(RT)）范围为σ(RT)=250 - 400 S/cm，电导率的非金属温度依赖性表明存在隧穿势垒，其主导着薄膜电导率。用十八胺（ODA）和聚（间氨基苯磺酸）（PABS）对SWNTs进行化学功能化显著降低了电导率；SWNT - ODA和SWNT - PABS的σ(RT)分别为3和0.3 S/cm。