基于单根 ZnO-Ga₂O₃ 核壳微丝的太阳盲型雪崩光电探测器。
Solar-Blind Avalanche Photodetector Based On Single ZnO-Ga₂O₃ Core-Shell Microwire.
机构信息
†State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033, People's Republic of China.
‡Graduate University of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
出版信息
Nano Lett. 2015 Jun 10;15(6):3988-93. doi: 10.1021/acs.nanolett.5b00906. Epub 2015 May 7.
High-performance solar-blind (200-280 nm) avalanche photodetectors (APDs) were fabricated based on highly crystallized ZnO-Ga2O3 core-shell microwires. The responsivity can reach up to 1.3 × 10(3) A/W under -6 V bias. Moreover, the corresponding detectivity was as high as 9.91 × 10(14) cm·Hz(1/2)/W. The device also showed a fast response, with a rise time shorter than 20 μs and a decay time of 42 μs. The quality of the detectors in solar-blind waveband is comparable to or even higher than that of commercial Si APD (APD120A2 from Thorlabs Inc.), with a responsivity ∼8 A/W, detectivity ∼10(12) cm·Hz(1/2)/W, and response time ∼20 ns. The high performance of this APD make it highly suitable for practical applications as solar-blind photodetectors, and this core-shell microstructure heterojunction design method would provide a new approach for realizing an APD device.
基于高度结晶的 ZnO-Ga2O3 核壳微丝，制备了高性能的日盲（200-280nm）雪崩光电探测器（APD）。在-6V 偏压下，响应度可达 1.3×10(3)A/W。此外，相应的探测率高达 9.91×10(14)cm·Hz(1/2)/W。该器件还表现出快速的响应，上升时间小于 20μs，衰减时间为 42μs。该探测器在日盲波段的性能可与商用 Si APD（来自 Thorlabs Inc.的 APD120A2）相媲美，甚至更高，其响应度约为 8A/W，探测率约为 10(12)cm·Hz(1/2)/W，响应时间约为 20ns。该 APD 的高性能使其非常适合用作日盲光电探测器，这种核壳微结构异质结设计方法为实现 APD 器件提供了新途径。
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