Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland.
Institute of Optoelectronics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland.
Sensors (Basel). 2023 May 2;23(9):4452. doi: 10.3390/s23094452.
The paper presents the long-term evolution and recent development of ultraviolet photodetectors. First, the general theory of ultraviolet (UV) photodetectors is briefly described. Then the different types of detectors are presented, starting with the older photoemission detectors through photomultipliers and image intensifiers. More attention is paid to silicon and different types of wide band gap semiconductor photodetectors such as AlGaN, SiC-based, and diamond detectors. Additionally, GaO is considered a promising material for solar-blind photodetectors due to its excellent electrical properties and a large bandgap energy. The last part of the paper deals with new UV photodetector concepts inspired by new device architectures based on low-dimensional solid materials. It is shown that the evolution of the architecture has shifted device performance toward higher sensitivity, higher frequency response, lower noise, and higher gain-bandwidth products.
本文介绍了紫外光探测器的长期演变和最新发展。首先，简要描述了紫外（UV）光探测器的一般理论。然后介绍了不同类型的探测器，从早期的光发射探测器开始，依次为光电倍增管和像增强器。接着重点介绍了硅和不同类型的宽禁带半导体探测器，如 AlGaN、基于 SiC 和金刚石探测器。此外，由于 GaO 具有优良的电学性能和较大的带隙能，因此被认为是一种很有前途的日盲型光电探测器材料。本文的最后一部分介绍了受基于低维固态材料的新型器件结构启发而产生的新型紫外光探测器概念。研究表明，结构的演变使得器件性能朝着更高的灵敏度、更高的频率响应、更低的噪声和更高的增益带宽乘积方向发展。
