基于氧化镓微丝的X射线探测器。

X-ray Detectors Based on GaO Microwires.

作者信息

Zhang Chongyang, Dou Wenjie, Yang Xun, Zang Huaping, Chen Yancheng, Fan Wei, Wang Shaoyi, Zhou Weimin, Chen Xuexia, Shan Chongxin

机构信息

Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China.

Science and Technology on Plasma Physics Laboratory, Laser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900, China.

出版信息

Materials (Basel). 2023 Jun 30;16(13):4742. doi: 10.3390/ma16134742.

DOI:10.3390/ma16134742

PMID:37445057

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10342333/

Abstract

X-ray detectors have numerous applications in medical imaging, industrial inspection, and crystal structure analysis. Gallium oxide (GaO) shows potential as a material for high-performance X-ray detectors due to its wide bandgap, relatively high mass attenuation coefficient, and resistance to radiation damage. In this study, we present Sn-doped GaO microwire detectors for solar-blind and X-ray detection. The developed detectors exhibit a switching ratio of 1.66 × 10 under X-ray irradiation and can operate stably from room temperature to 623 K, which is one of the highest reported operating temperatures for GaO X-ray detectors to date. These findings offer a promising new direction for the design of GaO-based X-ray detectors.

摘要

X射线探测器在医学成像、工业检测和晶体结构分析等领域有众多应用。氧化镓（GaO）因其宽带隙、相对较高的质量衰减系数以及抗辐射损伤能力，展现出作为高性能X射线探测器材料的潜力。在本研究中，我们展示了用于日盲和X射线探测的掺锡GaO微线探测器。所开发的探测器在X射线照射下的开关比为1.66×10，并且能在从室温到623 K的温度范围内稳定运行，这是迄今为止报道的GaO X射线探测器的最高工作温度之一。这些发现为基于GaO的X射线探测器设计提供了一个有前景的新方向。