Mandić Borka, Lazić Zoran, Marković Aleksa, Mandić Bojan, Mandić Miška, Djinić Ana, Miličić Biljana
Vojnosanit Pregl. 2015 Mar;72(3):233-40. doi: 10.2298/vsp131202075m.
BACKGROUND/AIM: Low-level laser therapy (LLLT) has been proven to stimulate bone repair, affecting cellular proliferation, differentiation and adhesion, and has shown a potential to reduce the healing time following implant placement. The aim of this clinical study was to investigate the influence of postoperative LLLT osseointegration and early success of self-tapping implants placed into low-density bone.
Following the split-mouth design, self-tapping implants n = 44) were inserted in the posterior maxilla of 12 patients. One jaw side randomly received LLLT (test group), while the other side was placebo (control group). For LLLT, a 637 nm gallium-aluminum-arsenide (GaAlAs) laser (Medicolaser 637, Technoline, Belgrade, Serbia) with an output power of 40 mW and continuous wave was used. Low-level laser treatment was performed immediately after the surgery and then repeated every day in the following 7 days. The total irradiation dose per treatment was 6.26 J/cm2 per implant. The study outcomes were: implant stability, alkaline-phosphatase (ALP) activity and early implant success rate. The follow-up took 6 weeks.
Irradiated implants achieved a higher stability compared with controls during the entire follow-up and the difference reached significance in the 5th postoperative week (paired t-test, p = 0.030). The difference in ALP activity between the groups was insignificant in any observation point (paired t-test, p > 0.05). The early implant success rate was 100%, regardless of LLLT usage.
LLLT applied daily during the first postoperative week expressed no significant influence on the osseointegration of self-tapping implants placed into low density bone of the posterior maxilla. Placement of self-tapping macro-designed implants into low density bone could be a predictable therapeutic procedure with a high early success rate regardless of LLLT usage.
背景/目的：低强度激光疗法（LLLT）已被证明可刺激骨修复，影响细胞增殖、分化和黏附，并显示出缩短种植体植入后愈合时间的潜力。本临床研究的目的是调查术后LLLT对植入低密度骨的自攻型种植体骨整合及早期成功率的影响。
采用分口设计，将44颗自攻型种植体植入12例患者的上颌后部。一侧颌骨随机接受LLLT（试验组），另一侧为安慰剂（对照组）。对于LLLT，使用输出功率为40 mW的637 nm砷化镓铝（GaAlAs）激光（Medicolaser 637，Technoline，塞尔维亚贝尔格莱德）和连续波。术后立即进行低强度激光治疗，随后在接下来的7天内每天重复进行。每次治疗每个种植体的总照射剂量为6.26 J/cm²。研究结果包括：种植体稳定性、碱性磷酸酶（ALP）活性和早期种植体成功率。随访为期6周。
在整个随访期间，接受照射的种植体比对照组具有更高的稳定性，且在术后第5周差异具有统计学意义（配对t检验，p = 0.030）。两组间ALP活性在任何观察点的差异均无统计学意义（配对t检验，p > 0.05）。无论是否使用LLLT，早期种植体成功率均为100%。
术后第一周每天应用LLLT对植入上颌后部低密度骨的自攻型种植体的骨整合无显著影响。无论是否使用LLLT，将自攻型大设计种植体植入低密度骨可能是一种可预测的治疗方法，早期成功率较高。
